Abstract
GaSb-based type-I quantum well laterally coupled distributed feedback diode lasers emitting in the methane absorption band near 3.27 μm were designed and fabricated. The first-order index grating with a period of 480 nm was defined by e-beam lithography and etched on both sides of 6 μm-wide shallow ridge waveguide. Coated 2 mm-long devices demonstrated stable continuous-wave single-frequency operation in a wide temperature range with an output power of 15 mW at +17°C and 40 mW at -20°C. The Bragg wavelength temperature tuning rate was ∼0.27 nm/K.
| Original language | English |
|---|---|
| Pages (from-to) | 1378-1380 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 50 |
| Issue number | 19 |
| DOIs | |
| State | Published - Sep 11 2014 |
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