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Dominant substrate noise coupling mechanism for multiple switching gates

  • Emre Salman
  • , Eby G. Friedman
  • , Radu M. Secareanu
  • , Olin L. Hartin
  • University of Rochester
  • Freescale Semiconductor

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The dominant substrate noise coupling mechanism is determined for multiple switching gates based on a physically intuitive model. The model exhibits reasonable accuracy as compared to SPICE. The regions where ground coupling and source/drain coupling dominate are described based on this model. The impact of multiple parameters such as the rise time, number of switching gates, decoupling capacitance, and parasitic inductance on the dominant noise coupling mechanism is investigated. The dominance of ground coupling in large scale circuits, as generally assumed, is shown to be invalid if sufficient decoupling capacitance is used or the circuit exhibits a low parasitic inductance such as a flip-chip package. The efficacy of several noise reduction techniques is discussed based on the application of the dominant noise analysis model.

Original languageEnglish
Title of host publicationProceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008
Pages261-266
Number of pages6
DOIs
StatePublished - 2008
Event9th International Symposium on Quality Electronic Design, ISQED 2008 - San Jose, CA, United States
Duration: Mar 17 2008Mar 19 2008

Publication series

NameProceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008

Conference

Conference9th International Symposium on Quality Electronic Design, ISQED 2008
Country/TerritoryUnited States
CitySan Jose, CA
Period03/17/0803/19/08

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