Dual wavelength GaSb based type i quantum well mid-infrared light emitting diodes

Seungyong Jung; Sergey Suchalkin; Gela Kipshidze; David Westerfeld; Eric Golden; Donald Snyder; Gregory Belenky

doi:10.1063/1.3425899

Dual wavelength GaSb based type i quantum well mid-infrared light emitting diodes

Seungyong Jung
, Sergey Suchalkin
, Gela Kipshidze
, David Westerfeld
, Eric Golden
, Donald Snyder
, Gregory Belenky

Electrical Engineering

Stony Brook University
Air Force Research Laboratory

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We have designed and developed dual wavelength type I quantum well light emitting diodes (LEDs) operating at 2 μm and 3-3.4 m wavelengths with independently controlled intensities. The room temperature quasicontinuous wave output power was 2.8 mW at 2 m and 0.14 mW at 3 m. The design of the dual wavelength structure allows for monolithically integrating LED pixels with different wavelengths opening the way for the fabrication of multiwavelength LED arrays for multispectral and hyperspectral imaging applications.

Original language	English
Article number	191102
Journal	Applied Physics Letters
Volume	96
Issue number	19
DOIs	https://doi.org/10.1063/1.3425899
State	Published - 2010

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abstract = "We have designed and developed dual wavelength type I quantum well light emitting diodes (LEDs) operating at 2 μm and 3-3.4 m wavelengths with independently controlled intensities. The room temperature quasicontinuous wave output power was 2.8 mW at 2 m and 0.14 mW at 3 m. The design of the dual wavelength structure allows for monolithically integrating LED pixels with different wavelengths opening the way for the fabrication of multiwavelength LED arrays for multispectral and hyperspectral imaging applications.",

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AU - Jung, Seungyong

AU - Suchalkin, Sergey

AU - Kipshidze, Gela

AU - Westerfeld, David

AU - Golden, Eric

AU - Snyder, Donald

AU - Belenky, Gregory

PY - 2010

Y1 - 2010

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AB - We have designed and developed dual wavelength type I quantum well light emitting diodes (LEDs) operating at 2 μm and 3-3.4 m wavelengths with independently controlled intensities. The room temperature quasicontinuous wave output power was 2.8 mW at 2 m and 0.14 mW at 3 m. The design of the dual wavelength structure allows for monolithically integrating LED pixels with different wavelengths opening the way for the fabrication of multiwavelength LED arrays for multispectral and hyperspectral imaging applications.

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U2 - 10.1063/1.3425899

DO - 10.1063/1.3425899

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VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Dual wavelength GaSb based type i quantum well mid-infrared light emitting diodes

Abstract

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