TY - GEN
T1 - Dual-Wavelength Operation of GaSb-Based Diode Lasers with Asymmetric Coupled Quantum Wells
AU - Jiang, Jiang
AU - Shterengas, Leon
AU - Hosoda, Takashi
AU - Stein, Aaron
AU - Belyanin, Alexey
AU - Kipshidze, Gela
AU - Belenky, Gregory
N1 - Publisher Copyright:
© 2019 The Author(s) 2019 OSA.
PY - 2019/5
Y1 - 2019/5
N2 - The DBR diode lasers with asymmetric tunnel coupled quantum wells having built-in resonant second order nonlinearity were designed and fabricated. The devices can generate comparable power in two bands near 2 um separated by ∼13 meV as required for intracavity difference frequency generation.
AB - The DBR diode lasers with asymmetric tunnel coupled quantum wells having built-in resonant second order nonlinearity were designed and fabricated. The devices can generate comparable power in two bands near 2 um separated by ∼13 meV as required for intracavity difference frequency generation.
UR - https://www.scopus.com/pages/publications/85069156057
U2 - 10.23919/CLEO.2019.8750228
DO - 10.23919/CLEO.2019.8750228
M3 - Conference contribution
AN - SCOPUS:85069156057
T3 - 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
BT - 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Conference on Lasers and Electro-Optics, CLEO 2019
Y2 - 5 May 2019 through 10 May 2019
ER -