Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

Maxim Ya Vinnichenko; Leonid E. Vorobjev; Dmitry A. Firsov; Marina O. Mashko; Anton N. Sofronov; Leon Shterengas; Gregory Belenky

doi:10.1063/1.4848494

Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

Maxim Ya Vinnichenko
, Leonid E. Vorobjev
, Dmitry A. Firsov
, Marina O. Mashko
, Anton N. Sofronov
, Leon Shterengas
, Gregory Belenky

Electrical Engineering

Peter the Great St. Petersburg Polytechnic University
Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Time dynamics of photoluminescence intensity was studied in InGaAsSb/AlGaAsSb quantum wells with different compositions of the barrier solid solution and with different width of the quantum wells. The time of charge carrier capture in quantum wells, the energy relaxation times, lifetime related to resonant Auger recombination were estimated.

Original language	English
Title of host publication	Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
Publisher	American Institute of Physics Inc.
Pages	480-481
Number of pages	2
ISBN (Print)	9780735411944
DOIs	https://doi.org/10.1063/1.4848494
State	Published - 2013
Event	31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland Duration: Jul 29 2012 → Aug 3 2012

Publication series

Name	AIP Conference Proceedings
Volume	1566
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	31st International Conference on the Physics of Semiconductors, ICPS 2012
Country/Territory	Switzerland
City	Zurich
Period	07/29/12 → 08/3/12

Keywords

Auger recombination
laser radiation
quantum wells

Access to Document

10.1063/1.4848494

Cite this

Vinnichenko, M. Y., Vorobjev, L. E., Firsov, D. A., Mashko, M. O., Sofronov, A. N., Shterengas, L., & Belenky, G. (2013). Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells. In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 480-481). (AIP Conference Proceedings; Vol. 1566). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848494

Vinnichenko, Maxim Ya ; Vorobjev, Leonid E. ; Firsov, Dmitry A. et al. / Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells. Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. American Institute of Physics Inc., 2013. pp. 480-481 (AIP Conference Proceedings).

@inproceedings{7dbe89829002495fbe7f463a943c5e8d,

title = "Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells",

abstract = "Time dynamics of photoluminescence intensity was studied in InGaAsSb/AlGaAsSb quantum wells with different compositions of the barrier solid solution and with different width of the quantum wells. The time of charge carrier capture in quantum wells, the energy relaxation times, lifetime related to resonant Auger recombination were estimated.",

keywords = "Auger recombination, laser radiation, quantum wells",

author = "Vinnichenko, \{Maxim Ya\} and Vorobjev, \{Leonid E.\} and Firsov, \{Dmitry A.\} and Mashko, \{Marina O.\} and Sofronov, \{Anton N.\} and Leon Shterengas and Gregory Belenky",

year = "2013",

doi = "10.1063/1.4848494",

language = "English",

isbn = "9780735411944",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics Inc.",

pages = "480--481",

booktitle = "Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012",

note = "31st International Conference on the Physics of Semiconductors, ICPS 2012 ; Conference date: 29-07-2012 Through 03-08-2012",

}

Vinnichenko, MY, Vorobjev, LE, Firsov, DA, Mashko, MO, Sofronov, AN, Shterengas, L & Belenky, G 2013, Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells. in Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. AIP Conference Proceedings, vol. 1566, American Institute of Physics Inc., pp. 480-481, 31st International Conference on the Physics of Semiconductors, ICPS 2012, Zurich, Switzerland, 07/29/12. https://doi.org/10.1063/1.4848494

Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells. / Vinnichenko, Maxim Ya; Vorobjev, Leonid E.; Firsov, Dmitry A. et al.
Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. American Institute of Physics Inc., 2013. p. 480-481 (AIP Conference Proceedings; Vol. 1566).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

AU - Vinnichenko, Maxim Ya

AU - Vorobjev, Leonid E.

AU - Firsov, Dmitry A.

AU - Mashko, Marina O.

AU - Sofronov, Anton N.

AU - Shterengas, Leon

AU - Belenky, Gregory

PY - 2013

Y1 - 2013

N2 - Time dynamics of photoluminescence intensity was studied in InGaAsSb/AlGaAsSb quantum wells with different compositions of the barrier solid solution and with different width of the quantum wells. The time of charge carrier capture in quantum wells, the energy relaxation times, lifetime related to resonant Auger recombination were estimated.

AB - Time dynamics of photoluminescence intensity was studied in InGaAsSb/AlGaAsSb quantum wells with different compositions of the barrier solid solution and with different width of the quantum wells. The time of charge carrier capture in quantum wells, the energy relaxation times, lifetime related to resonant Auger recombination were estimated.

KW - Auger recombination

KW - laser radiation

KW - quantum wells

UR - https://www.scopus.com/pages/publications/84907357345

U2 - 10.1063/1.4848494

DO - 10.1063/1.4848494

M3 - Conference contribution

AN - SCOPUS:84907357345

SN - 9780735411944

T3 - AIP Conference Proceedings

SP - 480

EP - 481

BT - Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012

PB - American Institute of Physics Inc.

T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012

Y2 - 29 July 2012 through 3 August 2012

ER -

Vinnichenko MY, Vorobjev LE, Firsov DA, Mashko MO, Sofronov AN, Shterengas L et al. Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells. In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. American Institute of Physics Inc. 2013. p. 480-481. (AIP Conference Proceedings). doi: 10.1063/1.4848494

Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

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