Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs while Utilizing Room Temperature Ion Implantations

Stephen A. Mancini; Seung Yup Jang; Zeyu Chen; Dongyoung Kim; Balaji Raghothamachar; Michael Dudley; Woongje Sung

doi:10.1109/WiPDA58524.2023.10382208

Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs while Utilizing Room Temperature Ion Implantations

Stephen A. Mancini
, Seung Yup Jang
, Zeyu Chen
, Dongyoung Kim
, Balaji Raghothamachar
, Michael Dudley
, Woongje Sung

Materials Science and Engineering

SUNY Albany
Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Several 1.2kV-rated 4H-SiC MOSFETs were fabricated with various edge termination (ET) structures to investigate the effects of both Junction Termination Extension (JTE) based and P+ ring-based ETs, which were implanted at room temperature (RT). The study revealed that JTE-based ETs exhibited reduced generation of Basal Plane Dislocations (BPD) and consequently suppressed leakage currents when the P+ dose exceeded the previously established RT critical aluminum dose of 1x1015 cm-2. In contrast, the P+ ring-based termination structures led to elevated leakage currents, even in the absence of BPDs within RT-implanted devices. Consequently, when producing devices using RT ion implantation, JTE-based ETs proved to be the ideal choice.

Original language	English
Title of host publication	2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350337136
DOIs	https://doi.org/10.1109/WiPDA58524.2023.10382208
State	Published - 2023
Event	10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 - Charlotte, United States Duration: Dec 4 2023 → Dec 6 2023

Publication series

Name	2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023

Conference

Conference	10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
Country/Territory	United States
City	Charlotte
Period	12/4/23 → 12/6/23

Keywords

4H-Silicon Carbide (SiC)
Basal Plane Dislocations (BPDs)
Breakdown Voltage
Edge Termination
Forward Blocking
Leakage Current
MOSFET
Room Temperature Implantation
X-Ray Topography

Access to Document

10.1109/WiPDA58524.2023.10382208

Cite this

Mancini, S. A., Jang, S. Y., Chen, Z., Kim, D., Raghothamachar, B., Dudley, M., & Sung, W. (2023). Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs while Utilizing Room Temperature Ion Implantations. In 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 (2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA58524.2023.10382208

Mancini, Stephen A. ; Jang, Seung Yup ; Chen, Zeyu et al. / Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs while Utilizing Room Temperature Ion Implantations. 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023).

@inproceedings{36641d47ea2244a491b2c26f969c9b9c,

title = "Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs while Utilizing Room Temperature Ion Implantations",

abstract = "Several 1.2kV-rated 4H-SiC MOSFETs were fabricated with various edge termination (ET) structures to investigate the effects of both Junction Termination Extension (JTE) based and P+ ring-based ETs, which were implanted at room temperature (RT). The study revealed that JTE-based ETs exhibited reduced generation of Basal Plane Dislocations (BPD) and consequently suppressed leakage currents when the P+ dose exceeded the previously established RT critical aluminum dose of 1x1015 cm-2. In contrast, the P+ ring-based termination structures led to elevated leakage currents, even in the absence of BPDs within RT-implanted devices. Consequently, when producing devices using RT ion implantation, JTE-based ETs proved to be the ideal choice.",

keywords = "4H-Silicon Carbide (SiC), Basal Plane Dislocations (BPDs), Breakdown Voltage, Edge Termination, Forward Blocking, Leakage Current, MOSFET, Room Temperature Implantation, X-Ray Topography",

author = "Mancini, \{Stephen A.\} and Jang, \{Seung Yup\} and Zeyu Chen and Dongyoung Kim and Balaji Raghothamachar and Michael Dudley and Woongje Sung",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 ; Conference date: 04-12-2023 Through 06-12-2023",

year = "2023",

doi = "10.1109/WiPDA58524.2023.10382208",

language = "English",

series = "2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023",

}

Mancini, SA, Jang, SY, Chen, Z, Kim, D, Raghothamachar, B , Dudley, M & Sung, W 2023, Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs while Utilizing Room Temperature Ion Implantations. in 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023. 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023, Charlotte, United States, 12/4/23. https://doi.org/10.1109/WiPDA58524.2023.10382208

Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs while Utilizing Room Temperature Ion Implantations. / Mancini, Stephen A.; Jang, Seung Yup; Chen, Zeyu et al.
2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs while Utilizing Room Temperature Ion Implantations

AU - Mancini, Stephen A.

AU - Jang, Seung Yup

AU - Chen, Zeyu

AU - Kim, Dongyoung

AU - Raghothamachar, Balaji

AU - Dudley, Michael

AU - Sung, Woongje

PY - 2023

Y1 - 2023

N2 - Several 1.2kV-rated 4H-SiC MOSFETs were fabricated with various edge termination (ET) structures to investigate the effects of both Junction Termination Extension (JTE) based and P+ ring-based ETs, which were implanted at room temperature (RT). The study revealed that JTE-based ETs exhibited reduced generation of Basal Plane Dislocations (BPD) and consequently suppressed leakage currents when the P+ dose exceeded the previously established RT critical aluminum dose of 1x1015 cm-2. In contrast, the P+ ring-based termination structures led to elevated leakage currents, even in the absence of BPDs within RT-implanted devices. Consequently, when producing devices using RT ion implantation, JTE-based ETs proved to be the ideal choice.

AB - Several 1.2kV-rated 4H-SiC MOSFETs were fabricated with various edge termination (ET) structures to investigate the effects of both Junction Termination Extension (JTE) based and P+ ring-based ETs, which were implanted at room temperature (RT). The study revealed that JTE-based ETs exhibited reduced generation of Basal Plane Dislocations (BPD) and consequently suppressed leakage currents when the P+ dose exceeded the previously established RT critical aluminum dose of 1x1015 cm-2. In contrast, the P+ ring-based termination structures led to elevated leakage currents, even in the absence of BPDs within RT-implanted devices. Consequently, when producing devices using RT ion implantation, JTE-based ETs proved to be the ideal choice.

KW - 4H-Silicon Carbide (SiC)

KW - Basal Plane Dislocations (BPDs)

KW - Breakdown Voltage

KW - Edge Termination

KW - Forward Blocking

KW - Leakage Current

KW - MOSFET

KW - Room Temperature Implantation

KW - X-Ray Topography

UR - https://www.scopus.com/pages/publications/85183587267

U2 - 10.1109/WiPDA58524.2023.10382208

DO - 10.1109/WiPDA58524.2023.10382208

M3 - Conference contribution

AN - SCOPUS:85183587267

T3 - 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023

BT - 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023

Y2 - 4 December 2023 through 6 December 2023

ER -

Mancini SA, Jang SY, Chen Z, Kim D, Raghothamachar B , Dudley M et al. Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs while Utilizing Room Temperature Ion Implantations. In 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023). doi: 10.1109/WiPDA58524.2023.10382208

Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs while Utilizing Room Temperature Ion Implantations

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Keywords

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