Effect of compressive strain on differential gain of GaSb-based type-I QW lasers

L. Shterengas; G. Belenky; J. G. Kim; A. Gourevitc; D. Donetsky; D. Westerfeld; R. Martinelli

doi:10.1109/CLEO.2006.4627688

Effect of compressive strain on differential gain of GaSb-based type-I QW lasers

L. Shterengas
, G. Belenky
, J. G. Kim
, A. Gourevitc
, D. Donetsky
, D. Westerfeld
, R. Martinelli

Electrical Engineering

Stony Brook University
Sarnoff Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

2.35μm GaSb-based diode lasers with QW compressive strains of 1.2 and 1.7% were designed and fabricated. Devices with heavily strained active region exhibit three times higher differential gain and half the threshold current.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs	https://doi.org/10.1109/CLEO.2006.4627688
State	Published - 2006
Event	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States Duration: May 21 2006 → May 26 2006

Publication series

Name	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Conference

Conference	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Country/Territory	United States
City	Long Beach, CA
Period	05/21/06 → 05/26/06

Access to Document

10.1109/CLEO.2006.4627688

Cite this

Shterengas, L., Belenky, G., Kim, J. G., Gourevitc, A., Donetsky, D., Westerfeld, D., & Martinelli, R. (2006). Effect of compressive strain on differential gain of GaSb-based type-I QW lasers. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 Article 4627688 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4627688

Shterengas, L. ; Belenky, G. ; Kim, J. G. et al. / Effect of compressive strain on differential gain of GaSb-based type-I QW lasers. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

@inproceedings{3c4c46d33d374657bfbc290b20f00a69,

title = "Effect of compressive strain on differential gain of GaSb-based type-I QW lasers",

abstract = "2.35μm GaSb-based diode lasers with QW compressive strains of 1.2 and 1.7\% were designed and fabricated. Devices with heavily strained active region exhibit three times higher differential gain and half the threshold current.",

author = "L. Shterengas and G. Belenky and Kim, \{J. G.\} and A. Gourevitc and D. Donetsky and D. Westerfeld and R. Martinelli",

year = "2006",

doi = "10.1109/CLEO.2006.4627688",

language = "English",

isbn = "1557528136",

series = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",

booktitle = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",

note = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 ; Conference date: 21-05-2006 Through 26-05-2006",

}

Shterengas, L, Belenky, G, Kim, JG, Gourevitc, A, Donetsky, D , Westerfeld, D & Martinelli, R 2006, Effect of compressive strain on differential gain of GaSb-based type-I QW lasers. in Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006., 4627688, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Long Beach, CA, United States, 05/21/06. https://doi.org/10.1109/CLEO.2006.4627688

Effect of compressive strain on differential gain of GaSb-based type-I QW lasers. / Shterengas, L.; Belenky, G.; Kim, J. G. et al.
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4627688 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of compressive strain on differential gain of GaSb-based type-I QW lasers

AU - Shterengas, L.

AU - Belenky, G.

AU - Kim, J. G.

AU - Gourevitc, A.

AU - Donetsky, D.

AU - Westerfeld, D.

AU - Martinelli, R.

PY - 2006

Y1 - 2006

N2 - 2.35μm GaSb-based diode lasers with QW compressive strains of 1.2 and 1.7% were designed and fabricated. Devices with heavily strained active region exhibit three times higher differential gain and half the threshold current.

AB - 2.35μm GaSb-based diode lasers with QW compressive strains of 1.2 and 1.7% were designed and fabricated. Devices with heavily strained active region exhibit three times higher differential gain and half the threshold current.

UR - https://www.scopus.com/pages/publications/55649090869

U2 - 10.1109/CLEO.2006.4627688

DO - 10.1109/CLEO.2006.4627688

M3 - Conference contribution

AN - SCOPUS:55649090869

SN - 1557528136

SN - 9781557528131

T3 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

BT - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

T2 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Y2 - 21 May 2006 through 26 May 2006

ER -

Shterengas L, Belenky G, Kim JG, Gourevitc A, Donetsky D , Westerfeld D et al. Effect of compressive strain on differential gain of GaSb-based type-I QW lasers. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4627688. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). doi: 10.1109/CLEO.2006.4627688

Effect of compressive strain on differential gain of GaSb-based type-I QW lasers

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