Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSB/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices

C. A. Wang; D. A. Shiau; M. K. Connors; L. R. Danielson; G. Nichols; D. Donetsky; S. Anikeev; G. Belenky

doi:10.1557/proc-763-b8.4

Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSB/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices

C. A. Wang
, D. A. Shiau
, M. K. Connors
, L. R. Danielson
, G. Nichols
, D. Donetsky
, S. Anikeev
, G. Belenky

Electrical Engineering

Massachusetts Institute of Technology
Lockheed Martin
Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

The effect of growth interruption on the properties of GaInAsSb/(Al)Ga(As)Sb heterostructures and on the performance of GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices grown by organometallic vapor phase epitaxy is reported. In-situ reflectance monitoring is shown to be sensitive for observation of surface degradation during growth interruption, and this data was correlated with materials characterization by high-resolution x-ray diffraction and 4K photoluminescence (PL). Minority-carrier lifetime by time-resolved PL was used to determine interfacial recombination velocity of GaInAsSb/AlGaAsSb and GaInAsSb/GaSb double heterostructures grown with and without interruption, respectively. GaInAsSb/AlGaAsSb TPV devices grown without growth interruption have a slightly higher performance compared to those grown with interruption.

Original language	English
Pages (from-to)	315-322
Number of pages	8
Journal	Materials Research Society Symposium - Proceedings
Volume	763
DOIs	https://doi.org/10.1557/proc-763-b8.4
State	Published - 2003
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 25 2003

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@article{6780c5a87c604ee68bb1bf10145f1e9f,

title = "Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSB/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices",

abstract = "The effect of growth interruption on the properties of GaInAsSb/(Al)Ga(As)Sb heterostructures and on the performance of GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices grown by organometallic vapor phase epitaxy is reported. In-situ reflectance monitoring is shown to be sensitive for observation of surface degradation during growth interruption, and this data was correlated with materials characterization by high-resolution x-ray diffraction and 4K photoluminescence (PL). Minority-carrier lifetime by time-resolved PL was used to determine interfacial recombination velocity of GaInAsSb/AlGaAsSb and GaInAsSb/GaSb double heterostructures grown with and without interruption, respectively. GaInAsSb/AlGaAsSb TPV devices grown without growth interruption have a slightly higher performance compared to those grown with interruption.",

author = "Wang, \{C. A.\} and Shiau, \{D. A.\} and Connors, \{M. K.\} and Danielson, \{L. R.\} and G. Nichols and D. Donetsky and S. Anikeev and G. Belenky",

year = "2003",

doi = "10.1557/proc-763-b8.4",

language = "English",

volume = "763",

pages = "315--322",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics ; Conference date: 22-04-2003 Through 25-04-2003",

}

TY - JOUR

T1 - Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSB/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices

AU - Wang, C. A.

AU - Shiau, D. A.

AU - Connors, M. K.

AU - Danielson, L. R.

AU - Nichols, G.

AU - Donetsky, D.

AU - Anikeev, S.

AU - Belenky, G.

PY - 2003

Y1 - 2003

N2 - The effect of growth interruption on the properties of GaInAsSb/(Al)Ga(As)Sb heterostructures and on the performance of GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices grown by organometallic vapor phase epitaxy is reported. In-situ reflectance monitoring is shown to be sensitive for observation of surface degradation during growth interruption, and this data was correlated with materials characterization by high-resolution x-ray diffraction and 4K photoluminescence (PL). Minority-carrier lifetime by time-resolved PL was used to determine interfacial recombination velocity of GaInAsSb/AlGaAsSb and GaInAsSb/GaSb double heterostructures grown with and without interruption, respectively. GaInAsSb/AlGaAsSb TPV devices grown without growth interruption have a slightly higher performance compared to those grown with interruption.

AB - The effect of growth interruption on the properties of GaInAsSb/(Al)Ga(As)Sb heterostructures and on the performance of GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices grown by organometallic vapor phase epitaxy is reported. In-situ reflectance monitoring is shown to be sensitive for observation of surface degradation during growth interruption, and this data was correlated with materials characterization by high-resolution x-ray diffraction and 4K photoluminescence (PL). Minority-carrier lifetime by time-resolved PL was used to determine interfacial recombination velocity of GaInAsSb/AlGaAsSb and GaInAsSb/GaSb double heterostructures grown with and without interruption, respectively. GaInAsSb/AlGaAsSb TPV devices grown without growth interruption have a slightly higher performance compared to those grown with interruption.

UR - https://www.scopus.com/pages/publications/0345359160

U2 - 10.1557/proc-763-b8.4

DO - 10.1557/proc-763-b8.4

M3 - Conference article

AN - SCOPUS:0345359160

SN - 0272-9172

VL - 763

SP - 315

EP - 322

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics

Y2 - 22 April 2003 through 25 April 2003

ER -

Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSB/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices

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