Effect of heterobarrier leakage on the performance of high-power 1.5 μm InGaAsP multiple-quantum-well lasers

L. Shterengas; R. Menna; W. Trussell; D. Donetsky; G. Belenky; J. Connolly; D. Garbuzov

doi:10.1063/1.1289054

Effect of heterobarrier leakage on the performance of high-power 1.5 μm InGaAsP multiple-quantum-well lasers

L. Shterengas
, R. Menna
, W. Trussell
, D. Donetsky
, G. Belenky
, J. Connolly
, D. Garbuzov

Electrical Engineering

Sarnoff Corporation
United States Army
Stony Brook University

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Broad stripe 1.5 μm InGaAsP/InP multiple-quantum-well graded-index separate-confinement heterostructure lasers with different waveguide widths and doping profiles were designed, fabricated, and characterized. A record value of more than 16 W of pulsed optical power was obtained from lasers with a broadened waveguide design. Studies of the characteristics of lasers with different p-doping profiles as well as modeling data show that the heterobarrier electron leakage is responsible for the effect of the device optical power saturation with current.

Original language	English
Pages (from-to)	2211-2214
Number of pages	4
Journal	Journal of Applied Physics
Volume	88
Issue number	5
DOIs	https://doi.org/10.1063/1.1289054
State	Published - Sep 2000

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abstract = "Broad stripe 1.5 μm InGaAsP/InP multiple-quantum-well graded-index separate-confinement heterostructure lasers with different waveguide widths and doping profiles were designed, fabricated, and characterized. A record value of more than 16 W of pulsed optical power was obtained from lasers with a broadened waveguide design. Studies of the characteristics of lasers with different p-doping profiles as well as modeling data show that the heterobarrier electron leakage is responsible for the effect of the device optical power saturation with current.",

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AU - Shterengas, L.

AU - Menna, R.

AU - Trussell, W.

AU - Donetsky, D.

AU - Belenky, G.

AU - Connolly, J.

AU - Garbuzov, D.

PY - 2000/9

Y1 - 2000/9

N2 - Broad stripe 1.5 μm InGaAsP/InP multiple-quantum-well graded-index separate-confinement heterostructure lasers with different waveguide widths and doping profiles were designed, fabricated, and characterized. A record value of more than 16 W of pulsed optical power was obtained from lasers with a broadened waveguide design. Studies of the characteristics of lasers with different p-doping profiles as well as modeling data show that the heterobarrier electron leakage is responsible for the effect of the device optical power saturation with current.

AB - Broad stripe 1.5 μm InGaAsP/InP multiple-quantum-well graded-index separate-confinement heterostructure lasers with different waveguide widths and doping profiles were designed, fabricated, and characterized. A record value of more than 16 W of pulsed optical power was obtained from lasers with a broadened waveguide design. Studies of the characteristics of lasers with different p-doping profiles as well as modeling data show that the heterobarrier electron leakage is responsible for the effect of the device optical power saturation with current.

UR - https://www.scopus.com/pages/publications/0001012563

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ER -

Effect of heterobarrier leakage on the performance of high-power 1.5 μm InGaAsP multiple-quantum-well lasers

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