Effect of p-doping on carrier leakage and characteristic temperature T_o of 1.3 μm strained InGaAsP/InP multiple quantum well lasers

Experiments were conducted on strained InGaAsP/InP multiple quantum well lasers with electron collectors having undoped and 1.5×10¹⁸ cm^-3 Zn-doped separate confinement heterostructures (SCH) to determine the effect of doping on carrier leakage and characteristic temperature. The dependence of the leakage current versus injection current exhibited a tendency to saturate for undoped structures and to remain linear within a measured range for devices with doped SCH. The observed nonlinearity of the dependency of leakage current versus injection contributes to the nonlinearity of light-injection current curves and thus increases the composed second order (CSO) distortion value for analog devices.