Effect of p-doping on the performance of high power 1.5-μm InGaAsP MQW lasers

R. Menna; L. Shterengas; G. Belenky; W. Trussell; D. Donetsky; M. Maiorov; J. Connolly; D. Garbuzov

Effect of p-doping on the performance of high power 1.5-μm InGaAsP MQW lasers

R. Menna
, L. Shterengas
, G. Belenky
, W. Trussell
, D. Donetsky
, M. Maiorov
, J. Connolly
, D. Garbuzov

Electrical Engineering

Sarnoff Corporation

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

High power 1.5-μm InGaAsP/InP lasers with two different p-cladding doping profiles were fabricated and studied. Power saturation at high currents was observed. Experimental studies together with modeling results show that electron heterobarrier leakage limits the output power of 1.5-μm InGaAsP/InP lasers. A pulsed output power of 14 W was obtained from a 100 μm aperture laser with a doped p-cladding/SCH interface.

Original language	English
Pages (from-to)	274-277
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 2000
Event	2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA Duration: May 14 2000 → May 18 2000

Cite this

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title = "Effect of p-doping on the performance of high power 1.5-μm InGaAsP MQW lasers",

abstract = "High power 1.5-μm InGaAsP/InP lasers with two different p-cladding doping profiles were fabricated and studied. Power saturation at high currents was observed. Experimental studies together with modeling results show that electron heterobarrier leakage limits the output power of 1.5-μm InGaAsP/InP lasers. A pulsed output power of 14 W was obtained from a 100 μm aperture laser with a doped p-cladding/SCH interface.",

author = "R. Menna and L. Shterengas and G. Belenky and W. Trussell and D. Donetsky and M. Maiorov and J. Connolly and D. Garbuzov",

year = "2000",

language = "English",

pages = "274--277",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "2000 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2000 Through 18-05-2000",

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TY - JOUR

T1 - Effect of p-doping on the performance of high power 1.5-μm InGaAsP MQW lasers

AU - Menna, R.

AU - Shterengas, L.

AU - Belenky, G.

AU - Trussell, W.

AU - Donetsky, D.

AU - Maiorov, M.

AU - Connolly, J.

AU - Garbuzov, D.

PY - 2000

Y1 - 2000

N2 - High power 1.5-μm InGaAsP/InP lasers with two different p-cladding doping profiles were fabricated and studied. Power saturation at high currents was observed. Experimental studies together with modeling results show that electron heterobarrier leakage limits the output power of 1.5-μm InGaAsP/InP lasers. A pulsed output power of 14 W was obtained from a 100 μm aperture laser with a doped p-cladding/SCH interface.

AB - High power 1.5-μm InGaAsP/InP lasers with two different p-cladding doping profiles were fabricated and studied. Power saturation at high currents was observed. Experimental studies together with modeling results show that electron heterobarrier leakage limits the output power of 1.5-μm InGaAsP/InP lasers. A pulsed output power of 14 W was obtained from a 100 μm aperture laser with a doped p-cladding/SCH interface.

UR - https://www.scopus.com/pages/publications/0033690208

M3 - Conference article

AN - SCOPUS:0033690208

SN - 1092-8669

SP - 274

EP - 277

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2000 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2000 through 18 May 2000

ER -

Effect of p-doping on the performance of high power 1.5-μm InGaAsP MQW lasers

Abstract

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