Effect of structural stress on the laser quality of highly doped Yb:KY(WO4)2/KY(WO4)2 and Yb:KLu(WO4)2/KLu(WO4)2 epitaxial structures

J. J. Carvajal; B. Raghothamachar; O. Silvestre; H. Chen; M. C. Pujol; V. Petrov; M. Dudley; M. Aguilo; F. Díaz

doi:10.1021/cg800835k

Effect of structural stress on the laser quality of highly doped Yb:KY(WO₄)₂/KY(WO₄)₂ and Yb:KLu(WO₄)₂/KLu(WO₄)₂ epitaxial structures

J. J. Carvajal
, B. Raghothamachar
, O. Silvestre
, H. Chen
, M. C. Pujol
, V. Petrov
, M. Dudley
, M. Aguilo
, F. Díaz

Materials Science and Engineering

Universidad Rovira i Virgili
Stony Brook University
Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this communication we demonstrate how the difference in laser performance of two highly doped (20 at %) epitaxial layers of Yb-doped KY(WO₄)₂ (KYW) grown on a KYW substrate and Yb-doped KLu(WO₄)₂ (KLuW) grown on a KLuW substrate, respectively, is related to the presence of structural stress in the epilayers, investigated by synchrotron white beam X-ray topography. From the results obtained, it is clear that the samples that show a larger amount of structural stress, Yb:KYW/KYW epitaxies, lead to lower efficiency in laser operation, giving a direct correlation between the existence and magnitude of such structural stress and the loss in efficiency of laser performance in such epitaxial layers which, from a spectroscopical point of view, are otherwise equivalent.

Original language	English
Pages (from-to)	652-656
Number of pages	5
Journal	Crystal Growth and Design
Volume	9
Issue number	2
DOIs	https://doi.org/10.1021/cg800835k
State	Published - Feb 2009

Access to Document

10.1021/cg800835k

Cite this

@article{c52f15f3d23049d8be0940b06506d29f,

title = "Effect of structural stress on the laser quality of highly doped Yb:KY(WO4)2/KY(WO4)2 and Yb:KLu(WO4)2/KLu(WO4)2 epitaxial structures",

abstract = "In this communication we demonstrate how the difference in laser performance of two highly doped (20 at \%) epitaxial layers of Yb-doped KY(WO4)2 (KYW) grown on a KYW substrate and Yb-doped KLu(WO4)2 (KLuW) grown on a KLuW substrate, respectively, is related to the presence of structural stress in the epilayers, investigated by synchrotron white beam X-ray topography. From the results obtained, it is clear that the samples that show a larger amount of structural stress, Yb:KYW/KYW epitaxies, lead to lower efficiency in laser operation, giving a direct correlation between the existence and magnitude of such structural stress and the loss in efficiency of laser performance in such epitaxial layers which, from a spectroscopical point of view, are otherwise equivalent.",

author = "Carvajal, \{J. J.\} and B. Raghothamachar and O. Silvestre and H. Chen and Pujol, \{M. C.\} and V. Petrov and M. Dudley and M. Aguilo and F. D{\'i}az",

year = "2009",

month = feb,

doi = "10.1021/cg800835k",

language = "English",

volume = "9",

pages = "652--656",

journal = "Crystal Growth and Design",

issn = "1528-7483",

number = "2",

}

TY - JOUR

T1 - Effect of structural stress on the laser quality of highly doped Yb:KY(WO4)2/KY(WO4)2 and Yb:KLu(WO4)2/KLu(WO4)2 epitaxial structures

AU - Carvajal, J. J.

AU - Raghothamachar, B.

AU - Silvestre, O.

AU - Chen, H.

AU - Pujol, M. C.

AU - Petrov, V.

AU - Dudley, M.

AU - Aguilo, M.

AU - Díaz, F.

PY - 2009/2

Y1 - 2009/2

N2 - In this communication we demonstrate how the difference in laser performance of two highly doped (20 at %) epitaxial layers of Yb-doped KY(WO4)2 (KYW) grown on a KYW substrate and Yb-doped KLu(WO4)2 (KLuW) grown on a KLuW substrate, respectively, is related to the presence of structural stress in the epilayers, investigated by synchrotron white beam X-ray topography. From the results obtained, it is clear that the samples that show a larger amount of structural stress, Yb:KYW/KYW epitaxies, lead to lower efficiency in laser operation, giving a direct correlation between the existence and magnitude of such structural stress and the loss in efficiency of laser performance in such epitaxial layers which, from a spectroscopical point of view, are otherwise equivalent.

AB - In this communication we demonstrate how the difference in laser performance of two highly doped (20 at %) epitaxial layers of Yb-doped KY(WO4)2 (KYW) grown on a KYW substrate and Yb-doped KLu(WO4)2 (KLuW) grown on a KLuW substrate, respectively, is related to the presence of structural stress in the epilayers, investigated by synchrotron white beam X-ray topography. From the results obtained, it is clear that the samples that show a larger amount of structural stress, Yb:KYW/KYW epitaxies, lead to lower efficiency in laser operation, giving a direct correlation between the existence and magnitude of such structural stress and the loss in efficiency of laser performance in such epitaxial layers which, from a spectroscopical point of view, are otherwise equivalent.

UR - https://www.scopus.com/pages/publications/61749093944

U2 - 10.1021/cg800835k

DO - 10.1021/cg800835k

M3 - Article

AN - SCOPUS:61749093944

SN - 1528-7483

VL - 9

SP - 652

EP - 656

JO - Crystal Growth and Design

JF - Crystal Growth and Design

IS - 2

ER -

Effect of structural stress on the laser quality of highly doped Yb:KY(WO₄)₂/KY(WO₄)₂ and Yb:KLu(WO₄)₂/KLu(WO₄)₂ epitaxial structures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this