TY - GEN
T1 - Effect of TSV fabrication technology on power distribution in 3D ICs
AU - Satheesh, Suhas M.
AU - Salman, Emre
PY - 2013
Y1 - 2013
N2 - The design implications of two distinct through silicon via (TSV) fabrication methods (via-first and via-last) have been investigated for power delivery in a 3D system. Different geometry, connectivity, and filling materials have been considered to develop equivalent electrical models for both via-first and via-last based power distribution networks. Based on these models, a valid design space has been developed where power supply noise is satisfied and physical area overhead is minimized. Under constant power supply noise, a via-last based power network occupies 7.5% less area. However, in addition to causing routing blockages, a via-last based power network exhibits high sensitivity to design parameters due to a high quality factor. Alternatively, a via-first based power network requires a large number of TSVs, but exhibits relatively more predictable behavior due to a lower quality factor (higher damping).
AB - The design implications of two distinct through silicon via (TSV) fabrication methods (via-first and via-last) have been investigated for power delivery in a 3D system. Different geometry, connectivity, and filling materials have been considered to develop equivalent electrical models for both via-first and via-last based power distribution networks. Based on these models, a valid design space has been developed where power supply noise is satisfied and physical area overhead is minimized. Under constant power supply noise, a via-last based power network occupies 7.5% less area. However, in addition to causing routing blockages, a via-last based power network exhibits high sensitivity to design parameters due to a high quality factor. Alternatively, a via-first based power network requires a large number of TSVs, but exhibits relatively more predictable behavior due to a lower quality factor (higher damping).
KW - 3d ic
KW - power noise
KW - tsv
UR - https://www.scopus.com/pages/publications/84878213333
U2 - 10.1145/2483028.2483111
DO - 10.1145/2483028.2483111
M3 - Conference contribution
AN - SCOPUS:84878213333
SN - 9781450319027
T3 - Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI
SP - 287
EP - 292
BT - GLSVLSI 2013 - Proceedings of the ACM International Conference of the Great Lakes Symposium on VLSI
T2 - 23rd ACM International Conference of the Great Lakes Symposium on VLSI, GLSVLSI 2013
Y2 - 2 May 2013 through 3 May 2013
ER -