Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1−xO2 thin films

Takashi Onaya; Toshihide Nabatame; Takahiro Nagata; Kazuhito Tsukagoshi; Jiyoung Kim; Chang Yong Nam; Esther H.R. Tsai; Koji Kita

doi:10.1016/j.sse.2023.108801

Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric Hf_xZr_1−xO₂ thin films

Takashi Onaya
, Toshihide Nabatame
, Takahiro Nagata
, Kazuhito Tsukagoshi
, Jiyoung Kim
, Chang Yong Nam
, Esther H.R. Tsai
, Koji Kita

Materials Science and Engineering

The University of Tokyo
National Institute for Materials Science Tsukuba
University of Texas at Dallas
Brookhaven National Laboratory

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

TiN/Hf_xZr_1−xO₂ (HZO)/TiN capacitors were prepared using two types of HZO films fabricated by atomic layer deposition using H₂O or O₂ plasma as an oxidant gas, and post-deposition annealing at 400 °C was performed before the TiN top-electrode fabrication. The ferroelectric orthorhombic phase was dominantly formed for the O₂ plasma-based capacitor due to the strongly oxidizing source of O₂ plasma, resulted in higher remanent polarization (2P_r = 20 µC/cm²) than that (13 µC/cm²) of the H₂O-based capacitor. The fatigue properties for the O₂ plasma-based capacitor were improved by 14 % after 10⁶ cycles compared to the H₂O-based capacitor. This could be attributed to an oxygen-rich interface reaction layer (IRL) including TiO_x between the HZO film and TiN bottom-electrode for the O₂ plasma-based capacitor. Based on these results, superior 2P_r and fatigue properties can be obtained using O₂ plasma-based HZO films.

Original language	English
Article number	108801
Journal	Solid State Electronics
Volume	210
DOIs	https://doi.org/10.1016/j.sse.2023.108801
State	Published - Dec 2023

Keywords

Atomic layer deposition (ALD)
Endurance property
Ferroelectric HfZrO thin film
Hard X-ray photoelectron spectroscopy (HAXPES)
Interface reaction layer
Metal–ferroelectric–metal (MFM) capacitor

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10.1016/j.sse.2023.108801

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@article{fecc62bc5ff44c5ab9b0ceeac43f7a58,

title = "Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1−xO2 thin films",

abstract = "TiN/HfxZr1−xO2 (HZO)/TiN capacitors were prepared using two types of HZO films fabricated by atomic layer deposition using H2O or O2 plasma as an oxidant gas, and post-deposition annealing at 400 °C was performed before the TiN top-electrode fabrication. The ferroelectric orthorhombic phase was dominantly formed for the O2 plasma-based capacitor due to the strongly oxidizing source of O2 plasma, resulted in higher remanent polarization (2Pr = 20 µC/cm2) than that (13 µC/cm2) of the H2O-based capacitor. The fatigue properties for the O2 plasma-based capacitor were improved by 14 \% after 106 cycles compared to the H2O-based capacitor. This could be attributed to an oxygen-rich interface reaction layer (IRL) including TiOx between the HZO film and TiN bottom-electrode for the O2 plasma-based capacitor. Based on these results, superior 2Pr and fatigue properties can be obtained using O2 plasma-based HZO films.",

keywords = "Atomic layer deposition (ALD), Endurance property, Ferroelectric HfZrO thin film, Hard X-ray photoelectron spectroscopy (HAXPES), Interface reaction layer, Metal–ferroelectric–metal (MFM) capacitor",

author = "Takashi Onaya and Toshihide Nabatame and Takahiro Nagata and Kazuhito Tsukagoshi and Jiyoung Kim and Nam, \{Chang Yong\} and Tsai, \{Esther H.R.\} and Koji Kita",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd",

year = "2023",

month = dec,

doi = "10.1016/j.sse.2023.108801",

language = "English",

volume = "210",

journal = "Solid State Electronics",

issn = "0038-1101",

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TY - JOUR

T1 - Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1−xO2 thin films

AU - Onaya, Takashi

AU - Nabatame, Toshihide

AU - Nagata, Takahiro

AU - Tsukagoshi, Kazuhito

AU - Kim, Jiyoung

AU - Nam, Chang Yong

AU - Tsai, Esther H.R.

AU - Kita, Koji

PY - 2023/12

Y1 - 2023/12

N2 - TiN/HfxZr1−xO2 (HZO)/TiN capacitors were prepared using two types of HZO films fabricated by atomic layer deposition using H2O or O2 plasma as an oxidant gas, and post-deposition annealing at 400 °C was performed before the TiN top-electrode fabrication. The ferroelectric orthorhombic phase was dominantly formed for the O2 plasma-based capacitor due to the strongly oxidizing source of O2 plasma, resulted in higher remanent polarization (2Pr = 20 µC/cm2) than that (13 µC/cm2) of the H2O-based capacitor. The fatigue properties for the O2 plasma-based capacitor were improved by 14 % after 106 cycles compared to the H2O-based capacitor. This could be attributed to an oxygen-rich interface reaction layer (IRL) including TiOx between the HZO film and TiN bottom-electrode for the O2 plasma-based capacitor. Based on these results, superior 2Pr and fatigue properties can be obtained using O2 plasma-based HZO films.

AB - TiN/HfxZr1−xO2 (HZO)/TiN capacitors were prepared using two types of HZO films fabricated by atomic layer deposition using H2O or O2 plasma as an oxidant gas, and post-deposition annealing at 400 °C was performed before the TiN top-electrode fabrication. The ferroelectric orthorhombic phase was dominantly formed for the O2 plasma-based capacitor due to the strongly oxidizing source of O2 plasma, resulted in higher remanent polarization (2Pr = 20 µC/cm2) than that (13 µC/cm2) of the H2O-based capacitor. The fatigue properties for the O2 plasma-based capacitor were improved by 14 % after 106 cycles compared to the H2O-based capacitor. This could be attributed to an oxygen-rich interface reaction layer (IRL) including TiOx between the HZO film and TiN bottom-electrode for the O2 plasma-based capacitor. Based on these results, superior 2Pr and fatigue properties can be obtained using O2 plasma-based HZO films.

KW - Atomic layer deposition (ALD)

KW - Endurance property

KW - Ferroelectric HfZrO thin film

KW - Hard X-ray photoelectron spectroscopy (HAXPES)

KW - Interface reaction layer

KW - Metal–ferroelectric–metal (MFM) capacitor

UR - https://www.scopus.com/pages/publications/85174686414

U2 - 10.1016/j.sse.2023.108801

DO - 10.1016/j.sse.2023.108801

M3 - Article

AN - SCOPUS:85174686414

SN - 0038-1101

VL - 210

JO - Solid State Electronics

JF - Solid State Electronics

M1 - 108801

ER -

Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric Hf_xZr_1−xO₂ thin films

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Keywords

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