@inproceedings{85d66d9698784e7792fa799d976fe8bf,
title = "Electrically pumped epitaxially regrown λ > 2 µm GaSb-based photonic crystal surface emitting lasers.",
abstract = "Photonic crystal surface emitting lasers (PCSELs) with wavelength up to 2.75 µm have been designed and fabricated within III-V-Sb material system. A high-index-contrast photonic crystal layer was incorporated into the diode and cascade diode laser heterostructures by air-hole-retaining epitaxial regrowth. Transmission electron microscopy studies demonstrated uniform and continuous regrowth of the nano-patterned GaSb surface with AlGaAsSb alloy until air-pockets start being formed. The electrically pumped PCSELs generated narrow spectrum low divergence beams with mW-level output power. The diode PCSELs emitting near 2 µm operated in continuous waver regime at low temperatures. The angle-resolved electroluminescence analysis demonstrated well resolved photonic subbands corresponding to Γ2 point of square lattice and photonic gaps of several meV.",
keywords = "antimonides, mid-infrared, photonic crystal, regrowth, surface emitting lasers",
author = "L. Shterengas and R. Liu and G. Kipshidze and A. Stein and W. Lee and Zakharov, \{D. N.\} and K. Kisslinger and G. Belenky",
note = "Publisher Copyright: {\textcopyright} 2022 SPIE · 0277-786X; Novel In-Plane Semiconductor Lasers XXI 2022 ; Conference date: 20-02-2022 Through 24-02-2022",
year = "2022",
doi = "10.1117/12.2615741",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Belyanin, \{Alexey A.\} and Smowton, \{Peter M.\}",
booktitle = "Novel In-Plane Semiconductor Lasers XXI",
}