ELECTRON DENSITIES IN InAs-AlSb QUANTUM WELLS.

Chin An Chang; L. L. Chang; E. E. Mendez; M. S. Christie; L. Esaki

doi:10.1116/1.582786

ELECTRON DENSITIES IN InAs-AlSb QUANTUM WELLS.

Chin An Chang
, L. L. Chang
, E. E. Mendez
, M. S. Christie
, L. Esaki

Physics and Astronomy

IBM

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

26 Scopus citations

Abstract

Both single wells and superlattices of InAs-AlSb have been grown by molecular beam epitaxy on GaAs substrates. The measured electron densities were found to depend on the processes used to define the sample geometry. While freshly cleaved samples show increasing electron densities and mobilities with the InAs layer thickness, etched samples give rise to much higher densities with no apparent dependence on the thickness. The discrepancies are believed to be related to the hygroscopic nature of AlSb.

Original language	English
Title of host publication	Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Pages	214-216
Number of pages	3
Volume	2
Edition	2
DOIs	https://doi.org/10.1116/1.582786
State	Published - Apr 1984

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@inbook{4830185bcb624decb6d3a1c8f52acfa1,

title = "ELECTRON DENSITIES IN InAs-AlSb QUANTUM WELLS.",

abstract = "Both single wells and superlattices of InAs-AlSb have been grown by molecular beam epitaxy on GaAs substrates. The measured electron densities were found to depend on the processes used to define the sample geometry. While freshly cleaved samples show increasing electron densities and mobilities with the InAs layer thickness, etched samples give rise to much higher densities with no apparent dependence on the thickness. The discrepancies are believed to be related to the hygroscopic nature of AlSb.",

author = "Chang, \{Chin An\} and Chang, \{L. L.\} and Mendez, \{E. E.\} and Christie, \{M. S.\} and L. Esaki",

year = "1984",

month = apr,

doi = "10.1116/1.582786",

language = "English",

isbn = "0883184443",

volume = "2",

pages = "214--216",

booktitle = "Journal of Vacuum Science \& Technology B: Microelectronics Processing and Phenomena",

edition = "2",

}

TY - CHAP

T1 - ELECTRON DENSITIES IN InAs-AlSb QUANTUM WELLS.

AU - Chang, Chin An

AU - Chang, L. L.

AU - Mendez, E. E.

AU - Christie, M. S.

AU - Esaki, L.

PY - 1984/4

Y1 - 1984/4

N2 - Both single wells and superlattices of InAs-AlSb have been grown by molecular beam epitaxy on GaAs substrates. The measured electron densities were found to depend on the processes used to define the sample geometry. While freshly cleaved samples show increasing electron densities and mobilities with the InAs layer thickness, etched samples give rise to much higher densities with no apparent dependence on the thickness. The discrepancies are believed to be related to the hygroscopic nature of AlSb.

AB - Both single wells and superlattices of InAs-AlSb have been grown by molecular beam epitaxy on GaAs substrates. The measured electron densities were found to depend on the processes used to define the sample geometry. While freshly cleaved samples show increasing electron densities and mobilities with the InAs layer thickness, etched samples give rise to much higher densities with no apparent dependence on the thickness. The discrepancies are believed to be related to the hygroscopic nature of AlSb.

UR - https://www.scopus.com/pages/publications/0021404293

U2 - 10.1116/1.582786

DO - 10.1116/1.582786

M3 - Chapter

AN - SCOPUS:0021404293

SN - 0883184443

VL - 2

SP - 214

EP - 216

BT - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

ER -

ELECTRON DENSITIES IN InAs-AlSb QUANTUM WELLS.

Abstract

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