Electronic Mobility in Semiconductor Heterostructures

E. E. Mendez

doi:10.1109/JQE.1986.1073191

Electronic Mobility in Semiconductor Heterostructures

E. E. Mendez

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Recent developments in the study of the electronic mobil-ity of two-dimensional (2-D) systems in semiconductor heterostructures are reviewed. The emphasis is on a comparison between theories and experimental data on the mobilities of 2-D electrons and holes in GaAs-Ga_1-xAl_xAs heterojunctions.

Original language	English
Pages (from-to)	1720-1727
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	22
Issue number	9
DOIs	https://doi.org/10.1109/JQE.1986.1073191
State	Published - Sep 1986

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10.1109/JQE.1986.1073191

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abstract = "Recent developments in the study of the electronic mobil-ity of two-dimensional (2-D) systems in semiconductor heterostructures are reviewed. The emphasis is on a comparison between theories and experimental data on the mobilities of 2-D electrons and holes in GaAs-Ga1-xAlxAs heterojunctions.",

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AB - Recent developments in the study of the electronic mobil-ity of two-dimensional (2-D) systems in semiconductor heterostructures are reviewed. The emphasis is on a comparison between theories and experimental data on the mobilities of 2-D electrons and holes in GaAs-Ga1-xAlxAs heterojunctions.

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Electronic Mobility in Semiconductor Heterostructures

Abstract

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