Electronic properties of unstrained unrelaxed narrow gap InAsxSb1-x alloys

S. Suchalkin; J. Ludwig; G. Belenky; B. Laikhtman; G. Kipshidze; Y. Lin; L. Shterengas; D. Smirnov; S. Luryi; W. L. Sarney; S. P. Svensson

doi:10.1088/0022-3727/49/10/105101

Electronic properties of unstrained unrelaxed narrow gap InAs_xSb_1-x alloys

S. Suchalkin
, J. Ludwig
, G. Belenky
, B. Laikhtman
, G. Kipshidze
, Y. Lin
, L. Shterengas
, D. Smirnov
, S. Luryi
, W. L. Sarney
, S. P. Svensson

Electrical Engineering

National High Magnetic Field Laboratory
Florida State University
Stony Brook University
Hebrew University of Jerusalem
U.S. Army Research Laboratory

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The electronic properties of unstrained unrelaxed InAs_xSb_1-x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: E_g = 0.10 eV, m∗ = 0.0082 m₀ at 4.2 K. The bowing coefficient of 0.038 m₀ obtained for the electron effective mass is in good agreement with that obtained from the Kane model.

Original language	English
Article number	105101
Journal	Journal of Physics D: Applied Physics
Volume	49
Issue number	10
DOIs	https://doi.org/10.1088/0022-3727/49/10/105101
State	Published - Feb 3 2016

Keywords

III-V semiconductors
metamorphic materials
narrow gap semiconductors

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10.1088/0022-3727/49/10/105101

Cite this

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title = "Electronic properties of unstrained unrelaxed narrow gap InAsxSb1-x alloys",

abstract = "The electronic properties of unstrained unrelaxed InAsxSb1-x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: Eg = 0.10 eV, m∗ = 0.0082 m0 at 4.2 K. The bowing coefficient of 0.038 m0 obtained for the electron effective mass is in good agreement with that obtained from the Kane model.",

keywords = "III-V semiconductors, metamorphic materials, narrow gap semiconductors",

author = "S. Suchalkin and J. Ludwig and G. Belenky and B. Laikhtman and G. Kipshidze and Y. Lin and L. Shterengas and D. Smirnov and S. Luryi and Sarney, \{W. L.\} and Svensson, \{S. P.\}",

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doi = "10.1088/0022-3727/49/10/105101",

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TY - JOUR

T1 - Electronic properties of unstrained unrelaxed narrow gap InAsxSb1-x alloys

AU - Suchalkin, S.

AU - Ludwig, J.

AU - Belenky, G.

AU - Laikhtman, B.

AU - Kipshidze, G.

AU - Lin, Y.

AU - Shterengas, L.

AU - Smirnov, D.

AU - Luryi, S.

AU - Sarney, W. L.

AU - Svensson, S. P.

PY - 2016/2/3

Y1 - 2016/2/3

N2 - The electronic properties of unstrained unrelaxed InAsxSb1-x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: Eg = 0.10 eV, m∗ = 0.0082 m0 at 4.2 K. The bowing coefficient of 0.038 m0 obtained for the electron effective mass is in good agreement with that obtained from the Kane model.

AB - The electronic properties of unstrained unrelaxed InAsxSb1-x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: Eg = 0.10 eV, m∗ = 0.0082 m0 at 4.2 K. The bowing coefficient of 0.038 m0 obtained for the electron effective mass is in good agreement with that obtained from the Kane model.

KW - III-V semiconductors

KW - metamorphic materials

KW - narrow gap semiconductors

UR - https://www.scopus.com/pages/publications/84960146036

U2 - 10.1088/0022-3727/49/10/105101

DO - 10.1088/0022-3727/49/10/105101

M3 - Article

AN - SCOPUS:84960146036

SN - 0022-3727

VL - 49

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 10

M1 - 105101

ER -

Electronic properties of unstrained unrelaxed narrow gap InAs_xSb_1-x alloys

Abstract

Keywords

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