Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

Ernesto H. Perea; Emilio E. Mendez; Clifton G. Fonstad

doi:10.1063/1.91389

Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

Ernesto H. Perea
, Emilio E. Mendez
, Clifton G. Fonstad

Physics and Astronomy

Massachusetts Institute of Technology

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

We report the first systematic measurement of the electroreflectance spectra of In_uGa_1-uP_vAs_1-v over the range of compositions that lattice-match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E₀, E₀+Δ ₀, E₁, E₁+Δ₁, Δ₀, and Δ₁. Experimentally determined values of E₀, E₀+Δ₀, and m*/m₀ have been used to predict the values of the g factors for these compounds.

Original language	English
Pages (from-to)	978-980
Number of pages	3
Journal	Applied Physics Letters
Volume	36
Issue number	12
DOIs	https://doi.org/10.1063/1.91389
State	Published - 1980

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title = "Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide",

abstract = "We report the first systematic measurement of the electroreflectance spectra of InuGa1-uPvAs1-v over the range of compositions that lattice-match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ 0, E1, E1+Δ1, Δ0, and Δ1. Experimentally determined values of E0, E0+Δ0, and m*/m0 have been used to predict the values of the g factors for these compounds.",

author = "Perea, \{Ernesto H.\} and Mendez, \{Emilio E.\} and Fonstad, \{Clifton G.\}",

year = "1980",

doi = "10.1063/1.91389",

language = "English",

volume = "36",

pages = "978--980",

journal = "Applied Physics Letters",

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T1 - Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

AU - Perea, Ernesto H.

AU - Mendez, Emilio E.

AU - Fonstad, Clifton G.

PY - 1980

Y1 - 1980

N2 - We report the first systematic measurement of the electroreflectance spectra of InuGa1-uPvAs1-v over the range of compositions that lattice-match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ 0, E1, E1+Δ1, Δ0, and Δ1. Experimentally determined values of E0, E0+Δ0, and m*/m0 have been used to predict the values of the g factors for these compounds.

AB - We report the first systematic measurement of the electroreflectance spectra of InuGa1-uPvAs1-v over the range of compositions that lattice-match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ 0, E1, E1+Δ1, Δ0, and Δ1. Experimentally determined values of E0, E0+Δ0, and m*/m0 have been used to predict the values of the g factors for these compounds.

UR - https://www.scopus.com/pages/publications/0008000560

U2 - 10.1063/1.91389

DO - 10.1063/1.91389

M3 - Article

AN - SCOPUS:0008000560

SN - 0003-6951

VL - 36

SP - 978

EP - 980

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

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