Elimination of degenerate epitaxy in the growth of high quality B 12As 2 single crystalline epitaxial films

Yu Zhang; Hui Chen; Michael Dudley; Yi Zhang; J. H. Edgar; Yinyan Gong; Silvia Bakalova; Martin Kuball; Lihua Zhang; Dong Su; Yimei Zhu

doi:10.1557/opl.2011.316

Elimination of degenerate epitaxy in the growth of high quality B ₁₂As ₂ single crystalline epitaxial films

Yu Zhang
, Hui Chen
, Michael Dudley
, Yi Zhang
, J. H. Edgar
, Yinyan Gong
, Silvia Bakalova
, Martin Kuball
, Lihua Zhang
, Dong Su
, Yimei Zhu

Materials Science and Engineering

Stony Brook University
Kansas State University
University of Bristol
Brookhaven National Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Elimination of degenerate epitaxy in the growth of icosahedral boron arsenide (B ₁₂AS ₂, abbreviated as IBA) was achieved on m-plane 15R-SiC substrates and 4H-SiC substrates intentionally misoriented by 7 degrees from (0001) towards [1-100]. Synchrotron white beam x-ray topography (SWBXT) revealed that only single orientation IBA was present in the epitaxial layers demonstrating the absence of twin variants which dominantly constitute the effects of degenerate epitaxy. Additionally, low asterism in the IBA diffraction spots compared to those grown on other SiC substrates indicates a superior film quality. Cross-sectional high resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) both confirmed the absence of twins in the IBA films and their high quality. The ease of nucleation on the ordered step structures present on these unique substrates overrides symmetry considerations that drive degenerate epitaxy and dominates the nucleation process of the IBA.

Original language	English
Title of host publication	Boron and Boron Compounds - From Fundamentals to Applications
Pages	15-20
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.316
State	Published - 2011
Event	2010 MRS Fall Meeting - Boston, MA, United States Duration: Nov 29 2010 → Dec 3 2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1307
ISSN (Print)	0272-9172

Conference

Conference	2010 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/29/10 → 12/3/10

Access to Document

10.1557/opl.2011.316

Cite this

Zhang, Y., Chen, H., Dudley, M., Zhang, Y., Edgar, J. H., Gong, Y., Bakalova, S., Kuball, M., Zhang, L., Su, D., & Zhu, Y. (2011). Elimination of degenerate epitaxy in the growth of high quality B ₁₂As ₂ single crystalline epitaxial films. In Boron and Boron Compounds - From Fundamentals to Applications (pp. 15-20). (Materials Research Society Symposium Proceedings; Vol. 1307). https://doi.org/10.1557/opl.2011.316

@inproceedings{ba146583c4a648c6bf239670446e264a,

title = "Elimination of degenerate epitaxy in the growth of high quality B 12As 2 single crystalline epitaxial films",

abstract = "Elimination of degenerate epitaxy in the growth of icosahedral boron arsenide (B 12AS 2, abbreviated as IBA) was achieved on m-plane 15R-SiC substrates and 4H-SiC substrates intentionally misoriented by 7 degrees from (0001) towards [1-100]. Synchrotron white beam x-ray topography (SWBXT) revealed that only single orientation IBA was present in the epitaxial layers demonstrating the absence of twin variants which dominantly constitute the effects of degenerate epitaxy. Additionally, low asterism in the IBA diffraction spots compared to those grown on other SiC substrates indicates a superior film quality. Cross-sectional high resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) both confirmed the absence of twins in the IBA films and their high quality. The ease of nucleation on the ordered step structures present on these unique substrates overrides symmetry considerations that drive degenerate epitaxy and dominates the nucleation process of the IBA.",

author = "Yu Zhang and Hui Chen and Michael Dudley and Yi Zhang and Edgar, \{J. H.\} and Yinyan Gong and Silvia Bakalova and Martin Kuball and Lihua Zhang and Dong Su and Yimei Zhu",

year = "2011",

doi = "10.1557/opl.2011.316",

language = "English",

isbn = "9781618395146",

series = "Materials Research Society Symposium Proceedings",

pages = "15--20",

booktitle = "Boron and Boron Compounds - From Fundamentals to Applications",

note = "2010 MRS Fall Meeting ; Conference date: 29-11-2010 Through 03-12-2010",

}

Zhang, Y, Chen, H, Dudley, M, Zhang, Y, Edgar, JH, Gong, Y, Bakalova, S, Kuball, M, Zhang, L, Su, D & Zhu, Y 2011, Elimination of degenerate epitaxy in the growth of high quality B ₁₂As ₂ single crystalline epitaxial films. in Boron and Boron Compounds - From Fundamentals to Applications. Materials Research Society Symposium Proceedings, vol. 1307, pp. 15-20, 2010 MRS Fall Meeting, Boston, MA, United States, 11/29/10. https://doi.org/10.1557/opl.2011.316

Elimination of degenerate epitaxy in the growth of high quality B ₁₂As ₂ single crystalline epitaxial films. / Zhang, Yu; Chen, Hui; Dudley, Michael et al.
Boron and Boron Compounds - From Fundamentals to Applications. 2011. p. 15-20 (Materials Research Society Symposium Proceedings; Vol. 1307).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Elimination of degenerate epitaxy in the growth of high quality B 12As 2 single crystalline epitaxial films

AU - Zhang, Yu

AU - Chen, Hui

AU - Dudley, Michael

AU - Zhang, Yi

AU - Edgar, J. H.

AU - Gong, Yinyan

AU - Bakalova, Silvia

AU - Kuball, Martin

AU - Zhang, Lihua

AU - Su, Dong

AU - Zhu, Yimei

PY - 2011

Y1 - 2011

N2 - Elimination of degenerate epitaxy in the growth of icosahedral boron arsenide (B 12AS 2, abbreviated as IBA) was achieved on m-plane 15R-SiC substrates and 4H-SiC substrates intentionally misoriented by 7 degrees from (0001) towards [1-100]. Synchrotron white beam x-ray topography (SWBXT) revealed that only single orientation IBA was present in the epitaxial layers demonstrating the absence of twin variants which dominantly constitute the effects of degenerate epitaxy. Additionally, low asterism in the IBA diffraction spots compared to those grown on other SiC substrates indicates a superior film quality. Cross-sectional high resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) both confirmed the absence of twins in the IBA films and their high quality. The ease of nucleation on the ordered step structures present on these unique substrates overrides symmetry considerations that drive degenerate epitaxy and dominates the nucleation process of the IBA.

AB - Elimination of degenerate epitaxy in the growth of icosahedral boron arsenide (B 12AS 2, abbreviated as IBA) was achieved on m-plane 15R-SiC substrates and 4H-SiC substrates intentionally misoriented by 7 degrees from (0001) towards [1-100]. Synchrotron white beam x-ray topography (SWBXT) revealed that only single orientation IBA was present in the epitaxial layers demonstrating the absence of twin variants which dominantly constitute the effects of degenerate epitaxy. Additionally, low asterism in the IBA diffraction spots compared to those grown on other SiC substrates indicates a superior film quality. Cross-sectional high resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) both confirmed the absence of twins in the IBA films and their high quality. The ease of nucleation on the ordered step structures present on these unique substrates overrides symmetry considerations that drive degenerate epitaxy and dominates the nucleation process of the IBA.

UR - https://www.scopus.com/pages/publications/84860137168

U2 - 10.1557/opl.2011.316

DO - 10.1557/opl.2011.316

M3 - Conference contribution

AN - SCOPUS:84860137168

SN - 9781618395146

T3 - Materials Research Society Symposium Proceedings

SP - 15

EP - 20

BT - Boron and Boron Compounds - From Fundamentals to Applications

T2 - 2010 MRS Fall Meeting

Y2 - 29 November 2010 through 3 December 2010

ER -