Abstract
We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling linewidths as a function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot-bound states, self-consistent edge electric field, and edge excitation drift velocity.
| Original language | English |
|---|---|
| Pages (from-to) | R4273-R4276 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 57 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1998 |
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