Epitaxial growth and characterization of silicon carbide films

Govindhan Dhanaraj; Michael Dudley; Yi Chen; Balaji Ragothamachar; Bei Wu; Hui Zhang

doi:10.1016/j.jcrysgro.2005.11.021

Epitaxial growth and characterization of silicon carbide films

Govindhan Dhanaraj
, Michael Dudley
, Yi Chen
, Balaji Ragothamachar
, Bei Wu
, Hui Zhang

Materials Science and Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

Silicon carbide (SiC) epitaxial layers have been grown in a chemical vapor deposition (CVD) system designed and fabricated in our laboratory. Silicon tetrachloride-propane as well as silane-propane were used as precursor gases. The hot zone was designed based on simulation by using numerical modeling. Growth rates up to 200 μm could be achieved. A new growth-assisted hydrogen etching was developed to show the distribution of the micropipes present in the substrate. Higher growth rate was observed on off-axis (0 0 0 1) 4 H SiC compared to the on-axis (0 0 0 1) wafer and growth mechanism was explained.

Original language	English
Pages (from-to)	344-348
Number of pages	5
Journal	Journal of Crystal Growth
Volume	287
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.11.021
State	Published - Jan 25 2006

Keywords

A1. Etching
A1. X-ray diffraction
A1. X-ray topography
A3. Chemical vapor deposition
A3. Vapor growth
B1. Silicon carbide

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10.1016/j.jcrysgro.2005.11.021

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abstract = "Silicon carbide (SiC) epitaxial layers have been grown in a chemical vapor deposition (CVD) system designed and fabricated in our laboratory. Silicon tetrachloride-propane as well as silane-propane were used as precursor gases. The hot zone was designed based on simulation by using numerical modeling. Growth rates up to 200 μm could be achieved. A new growth-assisted hydrogen etching was developed to show the distribution of the micropipes present in the substrate. Higher growth rate was observed on off-axis (0 0 0 1) 4 H SiC compared to the on-axis (0 0 0 1) wafer and growth mechanism was explained.",

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T1 - Epitaxial growth and characterization of silicon carbide films

AU - Dhanaraj, Govindhan

AU - Dudley, Michael

AU - Chen, Yi

AU - Ragothamachar, Balaji

AU - Wu, Bei

AU - Zhang, Hui

PY - 2006/1/25

Y1 - 2006/1/25

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AB - Silicon carbide (SiC) epitaxial layers have been grown in a chemical vapor deposition (CVD) system designed and fabricated in our laboratory. Silicon tetrachloride-propane as well as silane-propane were used as precursor gases. The hot zone was designed based on simulation by using numerical modeling. Growth rates up to 200 μm could be achieved. A new growth-assisted hydrogen etching was developed to show the distribution of the micropipes present in the substrate. Higher growth rate was observed on off-axis (0 0 0 1) 4 H SiC compared to the on-axis (0 0 0 1) wafer and growth mechanism was explained.

KW - A1. Etching

KW - A1. X-ray diffraction

KW - A1. X-ray topography

KW - A3. Chemical vapor deposition

KW - A3. Vapor growth

KW - B1. Silicon carbide

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DO - 10.1016/j.jcrysgro.2005.11.021

M3 - Article

AN - SCOPUS:30444460586

SN - 0022-0248

VL - 287

SP - 344

EP - 348

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Epitaxial growth and characterization of silicon carbide films

Abstract

Keywords

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