@inproceedings{95eee2e708e3468083ef1c2066c78eaf,
title = "Epitaxial growth of low density InAs/GaAs quantum dots emitting in 1.3 {\textendash} 1.6 μm range",
abstract = "The epitaxial technology capable of producing high-quality quantum dot (QD) emitters that operate within the telecom spectral range of 1.3 μm to 1.6 μm has been developed. The InAs QDs were grown on GaAs substrates. Two distinct cap layers, GaAs and GaInAs, have been investigated. A single layer of the capped QDs exhibited strong photoluminescence in a wide temperature range up to room temperature. Different epitaxial growth regimes have been employed to gain control over the peak emission wavelength and the surface density of the QDs. Intensive long-wavelength resonant photoluminescence was observed from an epitaxial heterostructure containing GaInAs-capped InAs QDs embedded in the GaAs λ-cavity sandwiched between AlGaAs/GaAs Bragg reflectors.",
keywords = "molecular beam epitaxy, quantum communication, quantum dot, quantum sensing, single photon emitters",
author = "M. Goodarzi and A. Petruk and G. Kipshidze and A. Andreev and Zakharov, \{D. N.\} and K. Kisslinger and A. Kaloyeros and S. Gallis and L. Shterengas",
note = "Publisher Copyright: {\textcopyright} 2026 SPIE.; 6th Quantum Computing, Communication, and Simulation ; Conference date: 17-01-2026 Through 23-01-2026",
year = "2026",
month = mar,
day = "5",
doi = "10.1117/12.3079969",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Hemmer, \{Philip R.\} and Migdall, \{Alan L.\} and Burenkov, \{Ivan A.\}",
booktitle = "Quantum Computing, Communication, and Simulation VI",
}