@inproceedings{b0c59a16ec9f4b0681633a61dbbb8c8f,
title = "Estimation of lattice strain in 4H-SiC commercial wafer by synchrotron monochromatic X-ray topographic contour mapping",
abstract = "The presence of lattice imperfections in n-doped 4H-SiC substrate crystals grown by physical vapor transport (PVT) leads to a nonuniform distribution of lattice strain. Residual stress raised from the lattice strain has a significant impact on the performance of related power devices. It is thus important to estimate the level and the variation of lattice strain in these crystals. In this study, a method is developed based on synchrotron monochromatic X-ray topography (SMBXT) to measure local strain field in 4H-SiC commercial wafers. This method is applied to a 75mm wafer and the strain map of the entire wafer is obtained. Results show that the level of lattice strain is much more significant than that of lattice tilt in 4H-SiC crystals.",
author = "Jianqiu Guo and Yu Yang and Balaji Raghothamachar and Michael Dudley",
note = "Publisher Copyright: {\textcopyright} 2017 The Electrochemical Society.; Gallium Nitride and Silicon Carbide Power Technologies 7 - 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",
year = "2017",
month = aug,
day = "17",
doi = "10.1149/08007.0245ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "245--250",
editor = "M. Dudley and M. Bakowski and N. Ohtani and B. Raghothamachar and K. Shenai",
booktitle = "ECS Transactions",
edition = "7",
}