@inproceedings{d39bbdc9c94c4d45a3dc99b96c8e2d8c,
title = "Evaluation of model for determining nitrogen doping concentration from resultant strain in heavily doped 4H-SiC crystals",
abstract = "Significant strain in 4H-S{\`I}C substrates can be introduced by impurity incorporation in heavily doped 4H-S{\`I}C crystals. The nondestructive X-ray double-crystal contour mapping method we reported recently is a powerful tool to estimate the lattice strain levels in 4H-S{\`I}C substrates with different doping concentrations. The lattice strain maps were derived from 11-20, 1-100 and 0008 reflections. Result shows that lattice strains within the basal plane and along the [0001] direction are in the order of 10{"}J and IO' respectively. Hall effect measurements performed to determine the doping concentration of 4H-S{\`I}C substrates show an increase in doping concentration with the decrease of contact resistivity. X-ray rocking curve measurements were employed to confirm the existence of significant lattice distortion in heavily doped 4H-S{\`I}C substrates, which is in good agreement with the lattice strain analysis based on X-ray contour mapping method.",
author = "Tuerxun Ailihumaer and Yu Yang and Jianqiu Guo and Balaji Raghothamachar and Michael Dudley",
note = "Publisher Copyright: {\textcopyright}The Electrochemical Society.; Symposium on Gallium Nitride and Silicon Carbide Power Technologies 8 - AiMES 2018, ECS and SMEQ Joint International Meeting ; Conference date: 30-09-2018 Through 04-10-2018",
year = "2018",
doi = "10.1149/08612.0053ecst",
language = "English",
isbn = "9781510871724",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "12",
pages = "53--61",
editor = "M. Dudley and M. Bakowski and K. Shenai and N. Ohtani and B. Raghothamachar",
booktitle = "ECS Transactions",
edition = "12",
}