TY - GEN
T1 - Evaluation of the switching characteristics of a gallium-nitride transistor
AU - Danilovic, Milisav
AU - Chen, Zheng
AU - Wang, Ruxi
AU - Luo, Fang
AU - Boroyevich, Dushan
AU - Mattavelli, Paolo
PY - 2011
Y1 - 2011
N2 - Gallium-nitride (GaN) technology for power conversion is maturing, with a growing need to evaluate the capabilities of GaN devices in high switching frequency and elevated ambient temperature operation. These capabilities may particularly benefit systems constrained by strict EMI standards, due to the possibility of significant size and weight reduction. An inductive load tester circuit has been developed for switching characterization of a GaN transistor (EPC1010) and a paired silicon diode (SBR10U200P5). Maximum measured switching speeds for hard switching turn-on and turn-off transitions were dv/dt (on) = 4 V/ns, di/dt(on) = 4.5 A/ns, and dv/dt (off) = 18 V/ns, di/dt(off) = 5 A/ns respectively. Total measured switching energy loss was Etot = 40 μJ under 100 V supply voltage and 15 A load current conditions, with little change with increase of transistor junction temperature from 25°C to 100°C. Zero-voltage switching reduced loss to only Etot = 6 μJ, thus enabling high switching frequency operation. As the switching pair of a silicon diode and an EPC1010 is not suitable in hard switching mode and high switching frequency operation due to high switching loss of the turn-on process, another tester was built. Here, two EPC1010 devices were used in a phase-leg configuration. The fastest switching speeds were dv/dt(on) = 21 V/ns, di/dt(on) = 9 A/ns, and dv/dt(off) = 20 V/ns, di/dt(off) = 2 A/ns respectively. Total measured switching energy loss was Etot = 11 μJ, under 100 V supply voltage and 15 A load current conditions.
AB - Gallium-nitride (GaN) technology for power conversion is maturing, with a growing need to evaluate the capabilities of GaN devices in high switching frequency and elevated ambient temperature operation. These capabilities may particularly benefit systems constrained by strict EMI standards, due to the possibility of significant size and weight reduction. An inductive load tester circuit has been developed for switching characterization of a GaN transistor (EPC1010) and a paired silicon diode (SBR10U200P5). Maximum measured switching speeds for hard switching turn-on and turn-off transitions were dv/dt (on) = 4 V/ns, di/dt(on) = 4.5 A/ns, and dv/dt (off) = 18 V/ns, di/dt(off) = 5 A/ns respectively. Total measured switching energy loss was Etot = 40 μJ under 100 V supply voltage and 15 A load current conditions, with little change with increase of transistor junction temperature from 25°C to 100°C. Zero-voltage switching reduced loss to only Etot = 6 μJ, thus enabling high switching frequency operation. As the switching pair of a silicon diode and an EPC1010 is not suitable in hard switching mode and high switching frequency operation due to high switching loss of the turn-on process, another tester was built. Here, two EPC1010 devices were used in a phase-leg configuration. The fastest switching speeds were dv/dt(on) = 21 V/ns, di/dt(on) = 9 A/ns, and dv/dt(off) = 20 V/ns, di/dt(off) = 2 A/ns respectively. Total measured switching energy loss was Etot = 11 μJ, under 100 V supply voltage and 15 A load current conditions.
UR - https://www.scopus.com/pages/publications/81855206594
U2 - 10.1109/ECCE.2011.6064128
DO - 10.1109/ECCE.2011.6064128
M3 - Conference contribution
AN - SCOPUS:81855206594
SN - 9781457705427
T3 - IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings
SP - 2681
EP - 2688
BT - IEEE Energy Conversion Congress and Exposition
T2 - 3rd Annual IEEE Energy Conversion Congress and Exposition, ECCE 2011
Y2 - 17 September 2011 through 22 September 2011
ER -