Evidence for a New Class of Defects in Highly n-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes

P. M. Voyles; D. J. Chadi; P. H. Citrin; D. A. Muller; J. L. Grazul; P. A. Northrup; H. J.L. Gossmann

Evidence for a New Class of Defects in Highly n-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes

P. M. Voyles
, D. J. Chadi
, P. H. Citrin
, D. A. Muller
, J. L. Grazul
, P. A. Northrup
, H. J.L. Gossmann

Geosciences

Nokia
University of Wisconsin-Madison
NEC Corporation
Broadcom Corporation

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

A new class of defects in highly n-doped Si was studied. Electron channeling experiments showed that in highly n-type Si grown at low temperatures, the primary electrically deactivating defect cannot belong to either recently proposed class of donor pairs or the widely accepted class of donor-vacancy clusters. A new class of defects consisting of two dopant donor atoms near a displaced Si atom, which formed a vacancy-interstitial pair was suggested by first-principles calculations.

Original language	English
Pages (from-to)	1255051-1255054
Number of pages	4
Journal	Physical Review Letters
Volume	91
Issue number	12
State	Published - Sep 19 2003

Cite this

@article{a61b761697a44e64a3af7a8b7efba26c,

title = "Evidence for a New Class of Defects in Highly n-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes",

abstract = "A new class of defects in highly n-doped Si was studied. Electron channeling experiments showed that in highly n-type Si grown at low temperatures, the primary electrically deactivating defect cannot belong to either recently proposed class of donor pairs or the widely accepted class of donor-vacancy clusters. A new class of defects consisting of two dopant donor atoms near a displaced Si atom, which formed a vacancy-interstitial pair was suggested by first-principles calculations.",

author = "Voyles, \{P. M.\} and Chadi, \{D. J.\} and Citrin, \{P. H.\} and Muller, \{D. A.\} and Grazul, \{J. L.\} and Northrup, \{P. A.\} and Gossmann, \{H. J.L.\}",

year = "2003",

month = sep,

day = "19",

language = "English",

volume = "91",

pages = "1255051--1255054",

journal = "Physical Review Letters",

issn = "0031-9007",

number = "12",

}

TY - JOUR

T1 - Evidence for a New Class of Defects in Highly n-Doped Si

T2 - Donor-Pair-Vacancy-Interstitial Complexes

AU - Voyles, P. M.

AU - Chadi, D. J.

AU - Citrin, P. H.

AU - Muller, D. A.

AU - Grazul, J. L.

AU - Northrup, P. A.

AU - Gossmann, H. J.L.

PY - 2003/9/19

Y1 - 2003/9/19

N2 - A new class of defects in highly n-doped Si was studied. Electron channeling experiments showed that in highly n-type Si grown at low temperatures, the primary electrically deactivating defect cannot belong to either recently proposed class of donor pairs or the widely accepted class of donor-vacancy clusters. A new class of defects consisting of two dopant donor atoms near a displaced Si atom, which formed a vacancy-interstitial pair was suggested by first-principles calculations.

AB - A new class of defects in highly n-doped Si was studied. Electron channeling experiments showed that in highly n-type Si grown at low temperatures, the primary electrically deactivating defect cannot belong to either recently proposed class of donor pairs or the widely accepted class of donor-vacancy clusters. A new class of defects consisting of two dopant donor atoms near a displaced Si atom, which formed a vacancy-interstitial pair was suggested by first-principles calculations.

UR - https://www.scopus.com/pages/publications/0142219834

M3 - Article

AN - SCOPUS:0142219834

SN - 0031-9007

VL - 91

SP - 1255051

EP - 1255054

JO - Physical Review Letters

JF - Physical Review Letters

IS - 12

ER -

Evidence for a New Class of Defects in Highly n-Doped Si: Donor-Pair-Vacancy-Interstitial Complexes

Abstract

Other files and links

Fingerprint

Cite this