Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures

W. I. Wang; T. S. Kuan; E. E. Mendez; L. Esaki

doi:10.1103/PhysRevB.31.6890

Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures

W. I. Wang
, T. S. Kuan
, E. E. Mendez
, L. Esaki

Physics and Astronomy

IBM

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26Ga0.74As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference.

Original language	English
Pages (from-to)	6890-6891
Number of pages	2
Journal	Physical Review B
Volume	31
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.31.6890
State	Published - 1985

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title = "Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures",

abstract = "The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26Ga0.74As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference.",

author = "Wang, \{W. I.\} and Kuan, \{T. S.\} and Mendez, \{E. E.\} and L. Esaki",

year = "1985",

doi = "10.1103/PhysRevB.31.6890",

language = "English",

volume = "31",

pages = "6890--6891",

journal = "Physical Review B",

issn = "0163-1829",

number = "10",

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TY - JOUR

T1 - Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures

AU - Wang, W. I.

AU - Kuan, T. S.

AU - Mendez, E. E.

AU - Esaki, L.

PY - 1985

Y1 - 1985

N2 - The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26Ga0.74As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference.

AB - The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26Ga0.74As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±0.02 of the energy-gap difference.

UR - https://www.scopus.com/pages/publications/35949015603

U2 - 10.1103/PhysRevB.31.6890

DO - 10.1103/PhysRevB.31.6890

M3 - Article

AN - SCOPUS:35949015603

SN - 0163-1829

VL - 31

SP - 6890

EP - 6891

JO - Physical Review B

JF - Physical Review B

IS - 10

ER -

Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures

Abstract

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