EXAFS study of the structural properties of in and in + C implanted Ge

R. Feng; F. Kremer; D. J. Sprouster; S. Mirzaei; S. Decoster; C. J. Glover; S. A. Medling; S. P. Russo; M. C. Ridgway

doi:10.1088/1742-6596/712/1/012102

EXAFS study of the structural properties of in and in + C implanted Ge

R. Feng
, F. Kremer
, D. J. Sprouster
, S. Mirzaei
, S. Decoster
, C. J. Glover
, S. A. Medling
, S. P. Russo
, M. C. Ridgway

Materials Science and Engineering

Australian National University
KU Leuven
Australian Nuclear Science and Technology Organisation
Royal Melbourne Institute of Technology University

Research output: Contribution to journal › Conference article › peer-review

Abstract

The structural configurations of In implanted Ge have been studied via x-ray absorption spectroscopy with and without the codoping of C. In the case of In singly implanted Ge, while the In atoms occupy an substitutional site in Ge (InGe₄) at low In concentration (≤ 2 at. %), they precipitate into a metallic phase (In metal) and form complexes composed of one vacancy and three Ge atoms (InVGe₃) at concentration ≥ 0.6 at. %. This behaviour can be suppressed by the addition of C leading to In-C pairing to form InCGe₃ complexes. This cluster enables In atoms to recover a four-fold coordinated structure and has the potential to improve the electrical activation of In atoms in Ge.

Original language	English
Article number	012102
Journal	Journal of Physics: Conference Series
Volume	712
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/712/1/012102
State	Published - 2016
Event	16th International Conference on X-Ray Absorption Fine Structure, XAFS 2015 - Karlsruhe, Germany Duration: Aug 23 2015 → Aug 28 2015

Access to Document

10.1088/1742-6596/712/1/012102

Cite this

@article{8a58bc5e3c754855b7c55a7ec669255b,

title = "EXAFS study of the structural properties of in and in + C implanted Ge",

abstract = "The structural configurations of In implanted Ge have been studied via x-ray absorption spectroscopy with and without the codoping of C. In the case of In singly implanted Ge, while the In atoms occupy an substitutional site in Ge (InGe4) at low In concentration (≤ 2 at. \%), they precipitate into a metallic phase (In metal) and form complexes composed of one vacancy and three Ge atoms (InVGe3) at concentration ≥ 0.6 at. \%. This behaviour can be suppressed by the addition of C leading to In-C pairing to form InCGe3 complexes. This cluster enables In atoms to recover a four-fold coordinated structure and has the potential to improve the electrical activation of In atoms in Ge.",

author = "R. Feng and F. Kremer and Sprouster, \{D. J.\} and S. Mirzaei and S. Decoster and Glover, \{C. J.\} and Medling, \{S. A.\} and Russo, \{S. P.\} and Ridgway, \{M. C.\}",

year = "2016",

doi = "10.1088/1742-6596/712/1/012102",

language = "English",

volume = "712",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

number = "1",

note = "16th International Conference on X-Ray Absorption Fine Structure, XAFS 2015 ; Conference date: 23-08-2015 Through 28-08-2015",

}

TY - JOUR

T1 - EXAFS study of the structural properties of in and in + C implanted Ge

AU - Feng, R.

AU - Kremer, F.

AU - Sprouster, D. J.

AU - Mirzaei, S.

AU - Decoster, S.

AU - Glover, C. J.

AU - Medling, S. A.

AU - Russo, S. P.

AU - Ridgway, M. C.

PY - 2016

Y1 - 2016

N2 - The structural configurations of In implanted Ge have been studied via x-ray absorption spectroscopy with and without the codoping of C. In the case of In singly implanted Ge, while the In atoms occupy an substitutional site in Ge (InGe4) at low In concentration (≤ 2 at. %), they precipitate into a metallic phase (In metal) and form complexes composed of one vacancy and three Ge atoms (InVGe3) at concentration ≥ 0.6 at. %. This behaviour can be suppressed by the addition of C leading to In-C pairing to form InCGe3 complexes. This cluster enables In atoms to recover a four-fold coordinated structure and has the potential to improve the electrical activation of In atoms in Ge.

AB - The structural configurations of In implanted Ge have been studied via x-ray absorption spectroscopy with and without the codoping of C. In the case of In singly implanted Ge, while the In atoms occupy an substitutional site in Ge (InGe4) at low In concentration (≤ 2 at. %), they precipitate into a metallic phase (In metal) and form complexes composed of one vacancy and three Ge atoms (InVGe3) at concentration ≥ 0.6 at. %. This behaviour can be suppressed by the addition of C leading to In-C pairing to form InCGe3 complexes. This cluster enables In atoms to recover a four-fold coordinated structure and has the potential to improve the electrical activation of In atoms in Ge.

UR - https://www.scopus.com/pages/publications/84978745426

U2 - 10.1088/1742-6596/712/1/012102

DO - 10.1088/1742-6596/712/1/012102

M3 - Conference article

AN - SCOPUS:84978745426

SN - 1742-6588

VL - 712

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012102

T2 - 16th International Conference on X-Ray Absorption Fine Structure, XAFS 2015

Y2 - 23 August 2015 through 28 August 2015

ER -

EXAFS study of the structural properties of in and in + C implanted Ge

Abstract

Access to Document

Other files and links

Fingerprint

Cite this