Extended SiC defects: Polarized light microscopy delineation and synchrotron white-beam X-ray topography ratification

Xianyun Ma; Michael Dudley; William Vetter; Tangali Sudarshan

doi:10.1143/jjap.42.l1077

Extended SiC defects: Polarized light microscopy delineation and synchrotron white-beam X-ray topography ratification

Xianyun Ma
, Michael Dudley
, William Vetter
, Tangali Sudarshan

Materials Science and Engineering

University of South Carolina
Stony Brook University

Research output: Contribution to journal › Letter › peer-review

25 Scopus citations

Abstract

A simple imaging technique using polarized light microscopy (PLM) has been developed to delineate and map the defects in silicon carbide (SiC) wafers. The correlation of different defects using synchrotron white-beam X-ray topography (SWBXT) and PLM has been established. The previously reported wave-shaped PLM features observed using PLM are confirmed to be screw dislocations by SWBXT. PLM can be used for rapid assessment of the quality of SiC substrates and substrates with an epitaxial film.

Original language	English
Pages (from-to)	L1077-L1079
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	9 AB
DOIs	https://doi.org/10.1143/jjap.42.l1077
State	Published - Sep 15 2003

Keywords

Defects
Micropipe
PLM
Screw dislocation
SiC
Silicon carbide
SWBXT

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10.1143/jjap.42.l1077

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title = "Extended SiC defects: Polarized light microscopy delineation and synchrotron white-beam X-ray topography ratification",

abstract = "A simple imaging technique using polarized light microscopy (PLM) has been developed to delineate and map the defects in silicon carbide (SiC) wafers. The correlation of different defects using synchrotron white-beam X-ray topography (SWBXT) and PLM has been established. The previously reported wave-shaped PLM features observed using PLM are confirmed to be screw dislocations by SWBXT. PLM can be used for rapid assessment of the quality of SiC substrates and substrates with an epitaxial film.",

keywords = "Defects, Micropipe, PLM, Screw dislocation, SiC, Silicon carbide, SWBXT",

author = "Xianyun Ma and Michael Dudley and William Vetter and Tangali Sudarshan",

year = "2003",

month = sep,

day = "15",

doi = "10.1143/jjap.42.l1077",

language = "English",

volume = "42",

pages = "L1077--L1079",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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TY - JOUR

T1 - Extended SiC defects

T2 - Polarized light microscopy delineation and synchrotron white-beam X-ray topography ratification

AU - Ma, Xianyun

AU - Dudley, Michael

AU - Vetter, William

AU - Sudarshan, Tangali

PY - 2003/9/15

Y1 - 2003/9/15

N2 - A simple imaging technique using polarized light microscopy (PLM) has been developed to delineate and map the defects in silicon carbide (SiC) wafers. The correlation of different defects using synchrotron white-beam X-ray topography (SWBXT) and PLM has been established. The previously reported wave-shaped PLM features observed using PLM are confirmed to be screw dislocations by SWBXT. PLM can be used for rapid assessment of the quality of SiC substrates and substrates with an epitaxial film.

AB - A simple imaging technique using polarized light microscopy (PLM) has been developed to delineate and map the defects in silicon carbide (SiC) wafers. The correlation of different defects using synchrotron white-beam X-ray topography (SWBXT) and PLM has been established. The previously reported wave-shaped PLM features observed using PLM are confirmed to be screw dislocations by SWBXT. PLM can be used for rapid assessment of the quality of SiC substrates and substrates with an epitaxial film.

KW - Defects

KW - Micropipe

KW - PLM

KW - Screw dislocation

KW - SiC

KW - Silicon carbide

KW - SWBXT

UR - https://www.scopus.com/pages/publications/0345415174

U2 - 10.1143/jjap.42.l1077

DO - 10.1143/jjap.42.l1077

M3 - Letter

AN - SCOPUS:0345415174

SN - 0021-4922

VL - 42

SP - L1077-L1079

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 AB

ER -

Extended SiC defects: Polarized light microscopy delineation and synchrotron white-beam X-ray topography ratification

Abstract

Keywords

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