External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm

Meng Wang; Tao Feng; Takashi Hosoda; Gela Kipshidze; Jiang Jiang; Leon Shterengas; Gregory Belenky

External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm

Meng Wang
, Tao Feng
, Takashi Hosoda
, Gela Kipshidze
, Jiang Jiang
, Leon Shterengas
, Gregory Belenky

Electrical Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Cascade type-I quantum well GaSb-based laser heterostructures with broad optical gain demonstrated tuning from 2.99 to 3.27 μm (above 35 meV) in Littrow external cavity configuration. The devices generated up to 5 mW of the narrow spectrum output power in continuous wave regime at room temperature.

Original language	English
Title of host publication	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781943580422
State	Published - Aug 6 2018
Event	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - San Jose, United States Duration: May 13 2018 → May 18 2018

Publication series

Name	2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

Conference

Conference	2018 Conference on Lasers and Electro-Optics, CLEO 2018
Country/Territory	United States
City	San Jose
Period	05/13/18 → 05/18/18

Cite this

Wang, M., Feng, T., Hosoda, T., Kipshidze, G., Jiang, J., Shterengas, L., & Belenky, G. (2018). External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings Article 8427490 (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{65117407b1f24673a15aee58621b7a80,

title = "External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm",

abstract = "Cascade type-I quantum well GaSb-based laser heterostructures with broad optical gain demonstrated tuning from 2.99 to 3.27 μm (above 35 meV) in Littrow external cavity configuration. The devices generated up to 5 mW of the narrow spectrum output power in continuous wave regime at room temperature.",

author = "Meng Wang and Tao Feng and Takashi Hosoda and Gela Kipshidze and Jiang Jiang and Leon Shterengas and Gregory Belenky",

note = "Publisher Copyright: {\textcopyright} 2018 OSA.; 2018 Conference on Lasers and Electro-Optics, CLEO 2018 ; Conference date: 13-05-2018 Through 18-05-2018",

year = "2018",

month = aug,

day = "6",

language = "English",

isbn = "9781943580422",

series = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings",

}

Wang, M, Feng, T, Hosoda, T, Kipshidze, G, Jiang, J, Shterengas, L & Belenky, G 2018, External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm. in 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings., 8427490, 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2018 Conference on Lasers and Electro-Optics, CLEO 2018, San Jose, United States, 05/13/18.

External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm. / Wang, Meng; Feng, Tao; Hosoda, Takashi et al.
2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8427490 (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm

AU - Wang, Meng

AU - Feng, Tao

AU - Hosoda, Takashi

AU - Kipshidze, Gela

AU - Jiang, Jiang

AU - Shterengas, Leon

AU - Belenky, Gregory

PY - 2018/8/6

Y1 - 2018/8/6

N2 - Cascade type-I quantum well GaSb-based laser heterostructures with broad optical gain demonstrated tuning from 2.99 to 3.27 μm (above 35 meV) in Littrow external cavity configuration. The devices generated up to 5 mW of the narrow spectrum output power in continuous wave regime at room temperature.

AB - Cascade type-I quantum well GaSb-based laser heterostructures with broad optical gain demonstrated tuning from 2.99 to 3.27 μm (above 35 meV) in Littrow external cavity configuration. The devices generated up to 5 mW of the narrow spectrum output power in continuous wave regime at room temperature.

UR - https://www.scopus.com/pages/publications/85052586977

M3 - Conference contribution

AN - SCOPUS:85052586977

SN - 9781943580422

T3 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

BT - 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 Conference on Lasers and Electro-Optics, CLEO 2018

Y2 - 13 May 2018 through 18 May 2018

ER -

Wang M, Feng T, Hosoda T, Kipshidze G, Jiang J, Shterengas L et al. External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8427490. (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings).

External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm

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