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Fractionally quantized Hall effect in two-dimensional systems of extreme electron concentration

  • E. E. Mendez
  • , L. L. Chang
  • , M. Heiblum
  • , L. Esaki
  • , M. Naughton
  • , K. Martin
  • , J. Brooks
  • IBM
  • Massachusetts Institute of Technology
  • Boston University

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

We report magnetotransport measurements, down to 0.050 K and up to 20 T, in two-dimensional systems with dilute and dense electron densities. The emphasis is on the latter regime, where the Hall resistance shows quantization for level filling factors at =43 and 53, and the magnetoresistance presents well-defined structures at =73 and 83. These results indicate that the fractional quantum Hall effect is a general phenomenon not restricted to the lowest-orbital Landau level.

Original languageEnglish
Pages (from-to)7310-7312
Number of pages3
JournalPhysical Review B
Volume30
Issue number12
DOIs
StatePublished - 1984

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