TY - GEN
T1 - Functionalized ImmunoFET for Detection of Phosphatidyl-L-serine
AU - Noyan, Utku
AU - Shah, Sahil
AU - Abshire, Pamela
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - This paper presents an ion-sensitive field-effect transistor (ISFET)-based biosensor for detecting phosphatidylserine (PS), a key apoptosis marker. The sensor, featuring a silicon nitride (Si3N4) membrane functionalized with Annexin V, achieved sensitivities of 20 mV/decade for Ag/AgCl electrodes and 52 mV/decade for gold electrodes, with a limit of detection down to 10 nM. Surface modification was validated via fluorescence microscopy, showing a twofold increase in signal intensity upon PS binding. Compared to fluorescence microscopy and enzyme-linked immunosorbent assay (ELISA), which require extensive processing, the ISFET-based approach offers a rapid, label-free, and miniaturizable alternative. Optimized surface treatment enhanced performance, making it suitable for real-time apoptotic marker detection and integration into portable diagnostics.
AB - This paper presents an ion-sensitive field-effect transistor (ISFET)-based biosensor for detecting phosphatidylserine (PS), a key apoptosis marker. The sensor, featuring a silicon nitride (Si3N4) membrane functionalized with Annexin V, achieved sensitivities of 20 mV/decade for Ag/AgCl electrodes and 52 mV/decade for gold electrodes, with a limit of detection down to 10 nM. Surface modification was validated via fluorescence microscopy, showing a twofold increase in signal intensity upon PS binding. Compared to fluorescence microscopy and enzyme-linked immunosorbent assay (ELISA), which require extensive processing, the ISFET-based approach offers a rapid, label-free, and miniaturizable alternative. Optimized surface treatment enhanced performance, making it suitable for real-time apoptotic marker detection and integration into portable diagnostics.
KW - Annexin V
KW - biosensor
KW - detection of apoptosis
KW - ISFET
KW - phosphatidylserine (PS)
KW - silicon nitride (SiN)
UR - https://www.scopus.com/pages/publications/105010648458
U2 - 10.1109/ISCAS56072.2025.11043505
DO - 10.1109/ISCAS56072.2025.11043505
M3 - Conference contribution
AN - SCOPUS:105010648458
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - ISCAS 2025 - IEEE International Symposium on Circuits and Systems, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2025 IEEE International Symposium on Circuits and Systems, ISCAS 2025
Y2 - 25 May 2025 through 28 May 2025
ER -