GaAs and SiC quantum wire arrays: fabrication and characterisation

V. A. Samuilov; I. A. Bashmakov; I. B. Butylina; I. M. Grigorieva; V. K. Ksenevich; L. V. Solovjova

GaAs and SiC quantum wire arrays: fabrication and characterisation

V. A. Samuilov
, I. A. Bashmakov
, I. B. Butylina
, I. M. Grigorieva
, V. K. Ksenevich
, L. V. Solovjova

Materials Science and Engineering

Belarusian State University

Research output: Contribution to conference › Paper › peer-review

Abstract

We report a novel approach for fabrication of mesoscopic ordered arrays (networks) based on self-organized patterning in complex liquids (nitrocellulose solution). In order to prepare semiconductor quantum wire arrays the networks are used as masks for further reactive-ion-beam etching of GaAs surface or as a precursors for synthesis of SiC on the surface of Si. Auger electron spectroscopy carbon peaks of converted networks exhibit a fine structure typical for SiC.

Original language	English
Pages	203-206
Number of pages	4
State	Published - 1999
Event	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA Duration: Jun 1 1998 → Jun 5 1998

Conference

Conference	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
City	Berkeley, CA, USA
Period	06/1/98 → 06/5/98

Cite this

@conference{3214788d08f34f0c986790d38a43e846,

title = "GaAs and SiC quantum wire arrays: fabrication and characterisation",

abstract = "We report a novel approach for fabrication of mesoscopic ordered arrays (networks) based on self-organized patterning in complex liquids (nitrocellulose solution). In order to prepare semiconductor quantum wire arrays the networks are used as masks for further reactive-ion-beam etching of GaAs surface or as a precursors for synthesis of SiC on the surface of Si. Auger electron spectroscopy carbon peaks of converted networks exhibit a fine structure typical for SiC.",

author = "Samuilov, \{V. A.\} and Bashmakov, \{I. A.\} and Butylina, \{I. B.\} and Grigorieva, \{I. M.\} and Ksenevich, \{V. K.\} and Solovjova, \{L. V.\}",

year = "1999",

language = "English",

pages = "203--206",

note = "Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) ; Conference date: 01-06-1998 Through 05-06-1998",

}

TY - CONF

T1 - GaAs and SiC quantum wire arrays

T2 - Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)

AU - Samuilov, V. A.

AU - Bashmakov, I. A.

AU - Butylina, I. B.

AU - Grigorieva, I. M.

AU - Ksenevich, V. K.

AU - Solovjova, L. V.

PY - 1999

Y1 - 1999

N2 - We report a novel approach for fabrication of mesoscopic ordered arrays (networks) based on self-organized patterning in complex liquids (nitrocellulose solution). In order to prepare semiconductor quantum wire arrays the networks are used as masks for further reactive-ion-beam etching of GaAs surface or as a precursors for synthesis of SiC on the surface of Si. Auger electron spectroscopy carbon peaks of converted networks exhibit a fine structure typical for SiC.

AB - We report a novel approach for fabrication of mesoscopic ordered arrays (networks) based on self-organized patterning in complex liquids (nitrocellulose solution). In order to prepare semiconductor quantum wire arrays the networks are used as masks for further reactive-ion-beam etching of GaAs surface or as a precursors for synthesis of SiC on the surface of Si. Auger electron spectroscopy carbon peaks of converted networks exhibit a fine structure typical for SiC.

UR - https://www.scopus.com/pages/publications/0032598513

M3 - Paper

AN - SCOPUS:0032598513

SP - 203

EP - 206

Y2 - 1 June 1998 through 5 June 1998

ER -

GaAs and SiC quantum wire arrays: fabrication and characterisation

Abstract

Conference

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