Abstract
A study of 2.5-μm In(Al)GaAsSb/GaSb type-I quantum well (QW) lasers was presented. The gain, loss and α-factor of the QW lasers were evaluated. The output characteristics of 2.5 μm diode lasers were presented in the continuous wave (CW) and pulsed modes. The values of α-factor at threshold were found in the range of 2.5 to 3.
| Original language | English |
|---|---|
| Pages (from-to) | 111-112 |
| Number of pages | 2 |
| Journal | Conference Digest - IEEE International Semiconductor Laser Conference |
| State | Published - 2002 |
| Event | 2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest - Garmish, Germany Duration: Sep 29 2002 → Oct 3 2002 |
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