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Gain, loss and α-factor in 2.5-μm In(Al)GaAsSb/GaSb type-I QW lasers with 1W CW output power

  • Garik Belenky
  • , J. G. Kim
  • , L. Shterengas
  • , R. U. Martinelli
  • , D. Garbuzov
  • Stony Brook University
  • Sarnoff Corporation
  • Princeton Lightwave, Inc.

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

A study of 2.5-μm In(Al)GaAsSb/GaSb type-I quantum well (QW) lasers was presented. The gain, loss and α-factor of the QW lasers were evaluated. The output characteristics of 2.5 μm diode lasers were presented in the continuous wave (CW) and pulsed modes. The values of α-factor at threshold were found in the range of 2.5 to 3.

Original languageEnglish
Pages (from-to)111-112
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
StatePublished - 2002
Event2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest - Garmish, Germany
Duration: Sep 29 2002Oct 3 2002

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