Gallium arsenide pixel detectors

R. Bates; M. Campbell; E. Cantatore; S. D'Auria; C. DaVià; C. Del Papa; E. M. Heijne; P. Middelkamp; V. O'Shea; C. Raine; I. Ropotar; L. Scharfetter; K. Smith; W. Snoeys

doi:10.1016/S0168-9002(98)00094-1

Gallium arsenide pixel detectors

R. Bates
, M. Campbell
, E. Cantatore
, S. D'Auria
, C. DaVià
, C. Del Papa
, E. M. Heijne
, P. Middelkamp
, V. O'Shea
, C. Raine
, I. Ropotar
, L. Scharfetter
, K. Smith
, W. Snoeys

Physics and Astronomy

CERN
University of Udine

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV π^- beam. The detection efficiency was 99.2% with a nominal threshold of 5000e^-.

Original language	English
Pages (from-to)	6-11
Number of pages	6
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	410
Issue number	1
DOIs	https://doi.org/10.1016/S0168-9002(98)00094-1
State	Published - Jun 1 1998

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10.1016/S0168-9002(98)00094-1

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title = "Gallium arsenide pixel detectors",

abstract = "GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV π- beam. The detection efficiency was 99.2\% with a nominal threshold of 5000e-.",

author = "R. Bates and M. Campbell and E. Cantatore and S. D'Auria and C. DaVi{\`a} and \{Del Papa\}, C. and Heijne, \{E. M.\} and P. Middelkamp and V. O'Shea and C. Raine and I. Ropotar and L. Scharfetter and K. Smith and W. Snoeys",

year = "1998",

month = jun,

day = "1",

doi = "10.1016/S0168-9002(98)00094-1",

language = "English",

volume = "410",

pages = "6--11",

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TY - JOUR

T1 - Gallium arsenide pixel detectors

AU - Bates, R.

AU - Campbell, M.

AU - Cantatore, E.

AU - D'Auria, S.

AU - DaVià, C.

AU - Del Papa, C.

AU - Heijne, E. M.

AU - Middelkamp, P.

AU - O'Shea, V.

AU - Raine, C.

AU - Ropotar, I.

AU - Scharfetter, L.

AU - Smith, K.

AU - Snoeys, W.

PY - 1998/6/1

Y1 - 1998/6/1

N2 - GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV π- beam. The detection efficiency was 99.2% with a nominal threshold of 5000e-.

AB - GaAs detectors can be fabricated with bidimensional single-sided electrode segmentation. They have been successfully bonded using flip-chip technology to the Omega-3 silicon read-out chip. We present here the design features of the GaAs pixel detectors and results from a test performed at the CERN SpS with a 120 GeV π- beam. The detection efficiency was 99.2% with a nominal threshold of 5000e-.

UR - https://www.scopus.com/pages/publications/0032092542

U2 - 10.1016/S0168-9002(98)00094-1

DO - 10.1016/S0168-9002(98)00094-1

M3 - Article

AN - SCOPUS:0032092542

SN - 0168-9002

VL - 410

SP - 6

EP - 11

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1

ER -

Gallium arsenide pixel detectors

Abstract

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