Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

Cyrus E. Dreyer; Audrius Alkauskas; John L. Lyons; James S. Speck; Chris G. Van De Walle

doi:10.1063/1.4942674

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

Cyrus E. Dreyer
, Audrius Alkauskas
, John L. Lyons
, James S. Speck
, Chris G. Van De Walle

Physics and Astronomy

Center for Physical Sciences and Technology
Kaunas University of Technology
University of California at Santa Barbara
Brookhaven National Laboratory

Research output: Contribution to journal › Article › peer-review

117 Scopus citations

Abstract

We describe a mechanism by which complexes between gallium vacancies and oxygen and/or hydrogen act as efficient channels for nonradiative recombination in InGaN alloys. Our identification is based on first-principles calculations of defect formation energies, charge-state transition levels, and nonradiative capture coefficients for electrons and holes. The dependence of these quantities on alloy composition is analyzed. We find that modest concentrations of the proposed defect complexes (∼10¹⁶cm^-3) can give rise to Shockley-Read-Hall coefficients A=(10⁷-10⁹) s^-1. The resulting nonradiative recombination would significantly reduce the internal quantum efficiency of optoelectronic devices.

Original language	English
Article number	141101
Journal	Applied Physics Letters
Volume	108
Issue number	14
DOIs	https://doi.org/10.1063/1.4942674
State	Published - Apr 4 2016

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title = "Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters",

abstract = "We describe a mechanism by which complexes between gallium vacancies and oxygen and/or hydrogen act as efficient channels for nonradiative recombination in InGaN alloys. Our identification is based on first-principles calculations of defect formation energies, charge-state transition levels, and nonradiative capture coefficients for electrons and holes. The dependence of these quantities on alloy composition is analyzed. We find that modest concentrations of the proposed defect complexes (∼1016cm-3) can give rise to Shockley-Read-Hall coefficients A=(107-109) s-1. The resulting nonradiative recombination would significantly reduce the internal quantum efficiency of optoelectronic devices.",

author = "Dreyer, \{Cyrus E.\} and Audrius Alkauskas and Lyons, \{John L.\} and Speck, \{James S.\} and \{Van De Walle\}, \{Chris G.\}",

note = "Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

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T1 - Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

AU - Dreyer, Cyrus E.

AU - Alkauskas, Audrius

AU - Lyons, John L.

AU - Speck, James S.

AU - Van De Walle, Chris G.

PY - 2016/4/4

Y1 - 2016/4/4

N2 - We describe a mechanism by which complexes between gallium vacancies and oxygen and/or hydrogen act as efficient channels for nonradiative recombination in InGaN alloys. Our identification is based on first-principles calculations of defect formation energies, charge-state transition levels, and nonradiative capture coefficients for electrons and holes. The dependence of these quantities on alloy composition is analyzed. We find that modest concentrations of the proposed defect complexes (∼1016cm-3) can give rise to Shockley-Read-Hall coefficients A=(107-109) s-1. The resulting nonradiative recombination would significantly reduce the internal quantum efficiency of optoelectronic devices.

AB - We describe a mechanism by which complexes between gallium vacancies and oxygen and/or hydrogen act as efficient channels for nonradiative recombination in InGaN alloys. Our identification is based on first-principles calculations of defect formation energies, charge-state transition levels, and nonradiative capture coefficients for electrons and holes. The dependence of these quantities on alloy composition is analyzed. We find that modest concentrations of the proposed defect complexes (∼1016cm-3) can give rise to Shockley-Read-Hall coefficients A=(107-109) s-1. The resulting nonradiative recombination would significantly reduce the internal quantum efficiency of optoelectronic devices.

UR - https://www.scopus.com/pages/publications/84964319384

U2 - 10.1063/1.4942674

DO - 10.1063/1.4942674

M3 - Article

AN - SCOPUS:84964319384

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141101

ER -

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

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