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GaN-Based MHz Single Phase Inverter with a High Efficiency Hybrid TCM Control Method

  • Teng Liu
  • , Ke Xu
  • , Yi Zhang
  • , Cai Chen
  • , Yong Kang
  • , Fang Luo
  • Huazhong University of Science and Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Triangular current mode (TCM) control for single phase inverters leads to significant improvement in efficiency at high switching frequencies. However, the huge switching frequency variation of the TCM-based inverter leads to excessive turn-off switching loss, as well as excessive core and winding losses of the inductor. For achieving better performances of TCM-based inverter, a hybrid TCM control is proposed for switching frequency limitation and maintaining high efficiency. An optimization algorithm is established for maximizing the efficiency of the hybrid TCM control. Based on an analytical loss model of GaN HEMTs in this optimization algorithm, the optimal control strategy can be determined. The results show the efficiency with optimal hybrid TCM control is higher than pure TCM operation at light loads. Finally, the proposed hybrid TCM control is verified in an interleaved GaN-based MHz single phase inverter.

Original languageEnglish
Title of host publicationAPEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3322-3326
Number of pages5
ISBN (Electronic)9781728148298
DOIs
StatePublished - Mar 2020
Event35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020 - New Orleans, United States
Duration: Mar 15 2020Mar 19 2020

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume2020-March

Conference

Conference35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020
Country/TerritoryUnited States
CityNew Orleans
Period03/15/2003/19/20

Keywords

  • analytical loss model
  • GaN HEMTs
  • high power density
  • QCFTCM
  • TCM

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