GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation

Zhiwei Wang; Zongheng Wu; Cai Chen; Yong Kang; Zhao Yuan; Fang Luo

doi:10.1109/APEC39645.2020.9124549

GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation

Zhiwei Wang
, Zongheng Wu
, Cai Chen
, Yong Kang
, Zhao Yuan
, Fang Luo

Electrical Engineering

Huazhong University of Science and Technology
University of Arkansas, Fayetteville

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

A four-switch Buck-Boost (FSBB) + half bridge LLC integrated two-stage DC-DC converter is analyzed and improved in this paper. This converter saves two power switches by half bridge multiplexing (HBM). The phase shift control strategy is proposed to eliminate DC bias magnetic of transformer and asymmetrical current of synchronous rectification MOSFETs caused by HBM. In addition, ZVS is achieved in FSBB stage. The operation principle and characteristics of the presented control strategy are analyzed in details, and verified on a 360V-440V input 24V/400W output experimental prototype. Power density and efficiency get higher by using GaN-based high electron mobility transistor (GaN-HEMT), which are up to 96.2% and 112W/in³ respectively.

Original language	English
Title of host publication	APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2219-2224
Number of pages	6
ISBN (Electronic)	9781728148298
DOIs	https://doi.org/10.1109/APEC39645.2020.9124549
State	Published - Mar 2020
Event	35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020 - New Orleans, United States Duration: Mar 15 2020 → Mar 19 2020

Publication series

Name	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume	2020-March

Conference

Conference	35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020
Country/Territory	United States
City	New Orleans
Period	03/15/20 → 03/19/20

Keywords

DC bias magnetic
gallium nitride device
half bridge multiplexing
phase shift control

Access to Document

10.1109/APEC39645.2020.9124549

Cite this

Wang, Z., Wu, Z., Chen, C., Kang, Y., Yuan, Z., & Luo, F. (2020). GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation. In APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition (pp. 2219-2224). Article 9124549 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2020-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC39645.2020.9124549

Wang, Zhiwei ; Wu, Zongheng ; Chen, Cai et al. / GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation. APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 2219-2224 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

@inproceedings{76bc019e9b6343ee897c0bb0420aeffd,

title = "GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation",

abstract = "A four-switch Buck-Boost (FSBB) + half bridge LLC integrated two-stage DC-DC converter is analyzed and improved in this paper. This converter saves two power switches by half bridge multiplexing (HBM). The phase shift control strategy is proposed to eliminate DC bias magnetic of transformer and asymmetrical current of synchronous rectification MOSFETs caused by HBM. In addition, ZVS is achieved in FSBB stage. The operation principle and characteristics of the presented control strategy are analyzed in details, and verified on a 360V-440V input 24V/400W output experimental prototype. Power density and efficiency get higher by using GaN-based high electron mobility transistor (GaN-HEMT), which are up to 96.2\% and 112W/in3 respectively.",

keywords = "DC bias magnetic, gallium nitride device, half bridge multiplexing, phase shift control",

author = "Zhiwei Wang and Zongheng Wu and Cai Chen and Yong Kang and Zhao Yuan and Fang Luo",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020 ; Conference date: 15-03-2020 Through 19-03-2020",

year = "2020",

month = mar,

doi = "10.1109/APEC39645.2020.9124549",

language = "English",

series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2219--2224",

booktitle = "APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition",

}

Wang, Z, Wu, Z, Chen, C, Kang, Y, Yuan, Z & Luo, F 2020, GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation. in APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition., 9124549, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, vol. 2020-March, Institute of Electrical and Electronics Engineers Inc., pp. 2219-2224, 35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020, New Orleans, United States, 03/15/20. https://doi.org/10.1109/APEC39645.2020.9124549

GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation. / Wang, Zhiwei; Wu, Zongheng; Chen, Cai et al.
APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2020. p. 2219-2224 9124549 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2020-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation

AU - Wang, Zhiwei

AU - Wu, Zongheng

AU - Chen, Cai

AU - Kang, Yong

AU - Yuan, Zhao

AU - Luo, Fang

PY - 2020/3

Y1 - 2020/3

N2 - A four-switch Buck-Boost (FSBB) + half bridge LLC integrated two-stage DC-DC converter is analyzed and improved in this paper. This converter saves two power switches by half bridge multiplexing (HBM). The phase shift control strategy is proposed to eliminate DC bias magnetic of transformer and asymmetrical current of synchronous rectification MOSFETs caused by HBM. In addition, ZVS is achieved in FSBB stage. The operation principle and characteristics of the presented control strategy are analyzed in details, and verified on a 360V-440V input 24V/400W output experimental prototype. Power density and efficiency get higher by using GaN-based high electron mobility transistor (GaN-HEMT), which are up to 96.2% and 112W/in3 respectively.

AB - A four-switch Buck-Boost (FSBB) + half bridge LLC integrated two-stage DC-DC converter is analyzed and improved in this paper. This converter saves two power switches by half bridge multiplexing (HBM). The phase shift control strategy is proposed to eliminate DC bias magnetic of transformer and asymmetrical current of synchronous rectification MOSFETs caused by HBM. In addition, ZVS is achieved in FSBB stage. The operation principle and characteristics of the presented control strategy are analyzed in details, and verified on a 360V-440V input 24V/400W output experimental prototype. Power density and efficiency get higher by using GaN-based high electron mobility transistor (GaN-HEMT), which are up to 96.2% and 112W/in3 respectively.

KW - DC bias magnetic

KW - gallium nitride device

KW - half bridge multiplexing

KW - phase shift control

UR - https://www.scopus.com/pages/publications/85087777926

U2 - 10.1109/APEC39645.2020.9124549

DO - 10.1109/APEC39645.2020.9124549

M3 - Conference contribution

AN - SCOPUS:85087777926

T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

SP - 2219

EP - 2224

BT - APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020

Y2 - 15 March 2020 through 19 March 2020

ER -

Wang Z, Wu Z, Chen C, Kang Y, Yuan Z, Luo F. GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation. In APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc. 2020. p. 2219-2224. 9124549. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). doi: 10.1109/APEC39645.2020.9124549

GaN Devices Based Integrated Two-Stage DC-DC Converter with Voltage Regulation

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