GaSb-AlSb-InAs MULTI-HETEROJUNCTIONS.

H. Takaoka; Chin An Chang; E. E. Mendez; L. L. Chang; L. Esaki

GaSb-AlSb-InAs MULTI-HETEROJUNCTIONS.

H. Takaoka
, Chin An Chang
, E. E. Mendez
, L. L. Chang
, L. Esaki

Physics and Astronomy

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Transport measurements have been made on GaSb-AlSb-InAs multi-heterojunctions prepared by MBE. The result has been analyzed on the basis of electron tunneling across thin AlSb layers.

Original language	English
Pages (from-to)	741-743
Number of pages	3
Journal	Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
Volume	117-118
Issue number	Pt II
State	Published - 1981
Event	Proc of the Int Conf on the Phys of Semicond, 16th - Montpellier, Fr Duration: Sep 6 1981 → Sep 10 1981

Cite this

@article{cc4e12fc6b8a4758b40ed20a8537e967,

title = "GaSb-AlSb-InAs MULTI-HETEROJUNCTIONS.",

abstract = "Transport measurements have been made on GaSb-AlSb-InAs multi-heterojunctions prepared by MBE. The result has been analyzed on the basis of electron tunneling across thin AlSb layers.",

author = "H. Takaoka and Chang, \{Chin An\} and Mendez, \{E. E.\} and Chang, \{L. L.\} and L. Esaki",

year = "1981",

language = "English",

volume = "117-118",

pages = "741--743",

journal = "Physica B: Physics of Condensed Matter \& C: Atomic, Molecular and Plasma Physics, Optics",

issn = "0165-1757",

number = "Pt II",

note = "Proc of the Int Conf on the Phys of Semicond, 16th ; Conference date: 06-09-1981 Through 10-09-1981",

}

TY - JOUR

T1 - GaSb-AlSb-InAs MULTI-HETEROJUNCTIONS.

AU - Takaoka, H.

AU - Chang, Chin An

AU - Mendez, E. E.

AU - Chang, L. L.

AU - Esaki, L.

PY - 1981

Y1 - 1981

N2 - Transport measurements have been made on GaSb-AlSb-InAs multi-heterojunctions prepared by MBE. The result has been analyzed on the basis of electron tunneling across thin AlSb layers.

AB - Transport measurements have been made on GaSb-AlSb-InAs multi-heterojunctions prepared by MBE. The result has been analyzed on the basis of electron tunneling across thin AlSb layers.

UR - https://www.scopus.com/pages/publications/0019534339

M3 - Conference article

AN - SCOPUS:0019534339

SN - 0165-1757

VL - 117-118

SP - 741

EP - 743

JO - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics

JF - Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics

IS - Pt II

T2 - Proc of the Int Conf on the Phys of Semicond, 16th

Y2 - 6 September 1981 through 10 September 1981

ER -

GaSb-AlSb-InAs MULTI-HETEROJUNCTIONS.

Abstract

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