GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm

G. Belenky; L. Shterengas; G. Kipshidze; T. Hosoda; J. Chen; S. Suchalkin

doi:10.1364/cleo.2009.ctugg1

GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm

G. Belenky
, L. Shterengas
, G. Kipshidze
, T. Hosoda
, J. Chen
, S. Suchalkin

Electrical Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present the performance parameters of GaSb-based diode lasers operating in spectral region from 2 to 3.36μm. CW output power levels of 120mW at 3μm, 60mW at 3.1μm, and 15mW at 3.36μm (285K) are reported.

Original language	English
Title of host publication	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Publisher	IEEE Computer Society
ISBN (Print)	9781557528698
DOIs	https://doi.org/10.1364/cleo.2009.ctugg1
State	Published - 2009
Event	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States Duration: Jun 2 2009 → Jun 4 2009

Publication series

Name	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Conference

Conference	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Country/Territory	United States
City	Baltimore, MD
Period	06/2/09 → 06/4/09

Access to Document

10.1364/cleo.2009.ctugg1

Cite this

Belenky, G., Shterengas, L., Kipshidze, G., Hosoda, T., Chen, J., & Suchalkin, S. (2009). GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 Article 5225659 (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009). IEEE Computer Society. https://doi.org/10.1364/cleo.2009.ctugg1

Belenky, G. ; Shterengas, L. ; Kipshidze, G. et al. / GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm. 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. IEEE Computer Society, 2009. (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

@inproceedings{8aa04572ec7e488eabb6b9bb45b83e12,

title = "GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm",

abstract = "We present the performance parameters of GaSb-based diode lasers operating in spectral region from 2 to 3.36μm. CW output power levels of 120mW at 3μm, 60mW at 3.1μm, and 15mW at 3.36μm (285K) are reported.",

author = "G. Belenky and L. Shterengas and G. Kipshidze and T. Hosoda and J. Chen and S. Suchalkin",

year = "2009",

doi = "10.1364/cleo.2009.ctugg1",

language = "English",

isbn = "9781557528698",

series = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

publisher = "IEEE Computer Society",

booktitle = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

note = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 ; Conference date: 02-06-2009 Through 04-06-2009",

}

Belenky, G, Shterengas, L, Kipshidze, G, Hosoda, T, Chen, J & Suchalkin, S 2009, GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm. in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009., 5225659, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, IEEE Computer Society, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, Baltimore, MD, United States, 06/2/09. https://doi.org/10.1364/cleo.2009.ctugg1

GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm. / Belenky, G.; Shterengas, L.; Kipshidze, G. et al.
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. IEEE Computer Society, 2009. 5225659 (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm

AU - Belenky, G.

AU - Shterengas, L.

AU - Kipshidze, G.

AU - Hosoda, T.

AU - Chen, J.

AU - Suchalkin, S.

PY - 2009

Y1 - 2009

N2 - We present the performance parameters of GaSb-based diode lasers operating in spectral region from 2 to 3.36μm. CW output power levels of 120mW at 3μm, 60mW at 3.1μm, and 15mW at 3.36μm (285K) are reported.

AB - We present the performance parameters of GaSb-based diode lasers operating in spectral region from 2 to 3.36μm. CW output power levels of 120mW at 3μm, 60mW at 3.1μm, and 15mW at 3.36μm (285K) are reported.

UR - https://www.scopus.com/pages/publications/71049120948

U2 - 10.1364/cleo.2009.ctugg1

DO - 10.1364/cleo.2009.ctugg1

M3 - Conference contribution

AN - SCOPUS:71049120948

SN - 9781557528698

T3 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

BT - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

PB - IEEE Computer Society

T2 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Y2 - 2 June 2009 through 4 June 2009

ER -

Belenky G, Shterengas L, Kipshidze G, Hosoda T, Chen J, Suchalkin S. GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. IEEE Computer Society. 2009. 5225659. (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009). doi: 10.1364/cleo.2009.ctugg1

GaSb-based laser diodes operating within spectral range of 2 - 3.5 μm

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this