GaSb-based laser diodes operating within the spectra range of 2-3.5 μm

G. Belenky; L. Shterengas; G. Kipshidze

doi:10.1109/ISLC.2010.5642759

GaSb-based laser diodes operating within the spectra range of 2-3.5 μm

G. Belenky
, L. Shterengas
, G. Kipshidze

Electrical Engineering

Stony Brook University
Power Photonic Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages	45-46
Number of pages	2
DOIs	https://doi.org/10.1109/ISLC.2010.5642759
State	Published - 2010
Event	2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan Duration: Sep 26 2010 → Sep 30 2010

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
Country/Territory	Japan
City	Kyoto
Period	09/26/10 → 09/30/10

Access to Document

10.1109/ISLC.2010.5642759

Cite this

@inproceedings{5574318bdf194c84b3164fe1dbd8dbb2,

title = "GaSb-based laser diodes operating within the spectra range of 2-3.5 μm",

author = "G. Belenky and L. Shterengas and G. Kipshidze",

year = "2010",

doi = "10.1109/ISLC.2010.5642759",

language = "English",

isbn = "9781424456833",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

pages = "45--46",

booktitle = "2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010",

note = "2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 ; Conference date: 26-09-2010 Through 30-09-2010",

}

Belenky, G, Shterengas, L & Kipshidze, G 2010, GaSb-based laser diodes operating within the spectra range of 2-3.5 μm. in 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010., 5642759, Conference Digest - IEEE International Semiconductor Laser Conference, pp. 45-46, 2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010, Kyoto, Japan, 09/26/10. https://doi.org/10.1109/ISLC.2010.5642759

GaSb-based laser diodes operating within the spectra range of 2-3.5 μm. / Belenky, G.; Shterengas, L.; Kipshidze, G.
2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010. 2010. p. 45-46 5642759 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - GaSb-based laser diodes operating within the spectra range of 2-3.5 μm

AU - Belenky, G.

AU - Shterengas, L.

AU - Kipshidze, G.

PY - 2010

Y1 - 2010

UR - https://www.scopus.com/pages/publications/78651108483

U2 - 10.1109/ISLC.2010.5642759

DO - 10.1109/ISLC.2010.5642759

M3 - Conference contribution

AN - SCOPUS:78651108483

SN - 9781424456833

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 45

EP - 46

BT - 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010

T2 - 2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010

Y2 - 26 September 2010 through 30 September 2010

ER -

GaSb-based laser diodes operating within the spectra range of 2-3.5 μm

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