GaSb based light emitting diodes with strained InGaAsSb type i quantum well active regions

Sergey Suchalkin; Seungyong Jung; Gela Kipshidze; Leon Shterengas; Takashi Hosoda; David Westerfeld; Donald Snyder; Gregory Belenky

doi:10.1063/1.2974795

GaSb based light emitting diodes with strained InGaAsSb type i quantum well active regions

Sergey Suchalkin
, Seungyong Jung
, Gela Kipshidze
, Leon Shterengas
, Takashi Hosoda
, David Westerfeld
, Donald Snyder
, Gregory Belenky

Electrical Engineering

Stony Brook University
Air Force Research Laboratory

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Mid-IR (λ≈3-3.5 μm) light emitting diodes with quinternary AlInGaAsSb barriers and InGaAsSb strained quantum wells grown on GaSb substrates have been demonstrated. The devices produced a quasi-cw emission power of 0.7 mW at room temperature and 2.5 mW at T=80 K.

Original language	English
Article number	081107
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2974795
State	Published - 2008

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10.1063/1.2974795

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@article{6e52db88f7114c8186e9a8bb72f9e82c,

title = "GaSb based light emitting diodes with strained InGaAsSb type i quantum well active regions",

abstract = "Mid-IR (λ≈3-3.5 μm) light emitting diodes with quinternary AlInGaAsSb barriers and InGaAsSb strained quantum wells grown on GaSb substrates have been demonstrated. The devices produced a quasi-cw emission power of 0.7 mW at room temperature and 2.5 mW at T=80 K.",

author = "Sergey Suchalkin and Seungyong Jung and Gela Kipshidze and Leon Shterengas and Takashi Hosoda and David Westerfeld and Donald Snyder and Gregory Belenky",

year = "2008",

doi = "10.1063/1.2974795",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "8",

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TY - JOUR

T1 - GaSb based light emitting diodes with strained InGaAsSb type i quantum well active regions

AU - Suchalkin, Sergey

AU - Jung, Seungyong

AU - Kipshidze, Gela

AU - Shterengas, Leon

AU - Hosoda, Takashi

AU - Westerfeld, David

AU - Snyder, Donald

AU - Belenky, Gregory

PY - 2008

Y1 - 2008

N2 - Mid-IR (λ≈3-3.5 μm) light emitting diodes with quinternary AlInGaAsSb barriers and InGaAsSb strained quantum wells grown on GaSb substrates have been demonstrated. The devices produced a quasi-cw emission power of 0.7 mW at room temperature and 2.5 mW at T=80 K.

AB - Mid-IR (λ≈3-3.5 μm) light emitting diodes with quinternary AlInGaAsSb barriers and InGaAsSb strained quantum wells grown on GaSb substrates have been demonstrated. The devices produced a quasi-cw emission power of 0.7 mW at room temperature and 2.5 mW at T=80 K.

UR - https://www.scopus.com/pages/publications/51349090415

U2 - 10.1063/1.2974795

DO - 10.1063/1.2974795

M3 - Article

AN - SCOPUS:51349090415

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081107

ER -

GaSb based light emitting diodes with strained InGaAsSb type i quantum well active regions

Abstract

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