GaSb-based type i quantum-well light-emitting diode addressable array operated at wavelengths up to 3.66 μ m

Seungyong Jung; Sergey Suchalkin; Gela Kipshidze; David Westerfeld; Donald Snyder; Matthew Johnson; Gregory Belenky

doi:10.1109/LPT.2009.2022843

GaSb-based type i quantum-well light-emitting diode addressable array operated at wavelengths up to 3.66 μ m

Seungyong Jung
, Sergey Suchalkin
, Gela Kipshidze
, David Westerfeld
, Donald Snyder
, Matthew Johnson
, Gregory Belenky

Electrical Engineering

Stony Brook University
Air Force Research Laboratory

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Type I GaSb-based light-emitting diodes (LEDs) have been demonstrated while operating at room temperature at wavelengths up to 3.66 μm with approximately 200 μW of quasi-continuous-wave optical power. A mid-infrared 6×6 addressable array of Type I LEDs was also demonstrated.

Original language	English
Pages (from-to)	1087-1089
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	15
DOIs	https://doi.org/10.1109/LPT.2009.2022843
State	Published - 2009

Keywords

Infrared (IR) scene projection
Mid-infrared (mid-IR) light-emitting diode (LED)
Type I

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10.1109/LPT.2009.2022843

Cite this

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title = "GaSb-based type i quantum-well light-emitting diode addressable array operated at wavelengths up to 3.66 μ m",

abstract = "Type I GaSb-based light-emitting diodes (LEDs) have been demonstrated while operating at room temperature at wavelengths up to 3.66 μm with approximately 200 μW of quasi-continuous-wave optical power. A mid-infrared 6×6 addressable array of Type I LEDs was also demonstrated.",

keywords = "Infrared (IR) scene projection, Mid-infrared (mid-IR) light-emitting diode (LED), Type I",

author = "Seungyong Jung and Sergey Suchalkin and Gela Kipshidze and David Westerfeld and Donald Snyder and Matthew Johnson and Gregory Belenky",

year = "2009",

doi = "10.1109/LPT.2009.2022843",

language = "English",

volume = "21",

pages = "1087--1089",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

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T1 - GaSb-based type i quantum-well light-emitting diode addressable array operated at wavelengths up to 3.66 μ m

AU - Jung, Seungyong

AU - Suchalkin, Sergey

AU - Kipshidze, Gela

AU - Westerfeld, David

AU - Snyder, Donald

AU - Johnson, Matthew

AU - Belenky, Gregory

PY - 2009

Y1 - 2009

N2 - Type I GaSb-based light-emitting diodes (LEDs) have been demonstrated while operating at room temperature at wavelengths up to 3.66 μm with approximately 200 μW of quasi-continuous-wave optical power. A mid-infrared 6×6 addressable array of Type I LEDs was also demonstrated.

AB - Type I GaSb-based light-emitting diodes (LEDs) have been demonstrated while operating at room temperature at wavelengths up to 3.66 μm with approximately 200 μW of quasi-continuous-wave optical power. A mid-infrared 6×6 addressable array of Type I LEDs was also demonstrated.

KW - Infrared (IR) scene projection

KW - Mid-infrared (mid-IR) light-emitting diode (LED)

KW - Type I

UR - https://www.scopus.com/pages/publications/77953002779

U2 - 10.1109/LPT.2009.2022843

DO - 10.1109/LPT.2009.2022843

M3 - Article

AN - SCOPUS:77953002779

SN - 1041-1135

VL - 21

SP - 1087

EP - 1089

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

ER -

GaSb-based type i quantum-well light-emitting diode addressable array operated at wavelengths up to 3.66 μ m

Abstract

Keywords

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