Giant polarization charge density at lattice-matched GaN/ScN interfaces

Nicholas L. Adamski; Cyrus E. Dreyer; Chris G. Van De Walle

doi:10.1063/1.5126717

Giant polarization charge density at lattice-matched GaN/ScN interfaces

Nicholas L. Adamski
, Cyrus E. Dreyer
, Chris G. Van De Walle

Physics and Astronomy

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Rock-salt ScN is a semiconductor with a small lattice mismatch to wurtzite GaN. Within the modern theory of polarization, ScN has a nonvanishing formal polarization along the [111] direction. As a result, we demonstrate that an interface between (0001) GaN and (111) ScN exhibits a large polarization discontinuity of -1.358 Cm - 2. Interfaces between ScN and wurtzite III-nitrides will exhibit a high-density electron gas at the (0001) GaN interface or a hole gas at the (0001) GaN interface, with carrier concentrations up to 8.5 × 10 14 cm^-2. The large polarization difference and small strain make ScN a desirable choice for polarization-enhanced tunnel junctions within the III-nitride materials system. The large sheet carrier densities may also be useful for contacts or current spreading layers.

Original language	English
Article number	232103
Journal	Applied Physics Letters
Volume	115
Issue number	23
DOIs	https://doi.org/10.1063/1.5126717
State	Published - Dec 2 2019

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@article{af0b19bdd26b471ca38676fb158add65,

title = "Giant polarization charge density at lattice-matched GaN/ScN interfaces",

abstract = "Rock-salt ScN is a semiconductor with a small lattice mismatch to wurtzite GaN. Within the modern theory of polarization, ScN has a nonvanishing formal polarization along the [111] direction. As a result, we demonstrate that an interface between (0001) GaN and (111) ScN exhibits a large polarization discontinuity of -1.358 Cm - 2. Interfaces between ScN and wurtzite III-nitrides will exhibit a high-density electron gas at the (0001) GaN interface or a hole gas at the (0001) GaN interface, with carrier concentrations up to 8.5 × 10 14 cm-2. The large polarization difference and small strain make ScN a desirable choice for polarization-enhanced tunnel junctions within the III-nitride materials system. The large sheet carrier densities may also be useful for contacts or current spreading layers.",

author = "Adamski, \{Nicholas L.\} and Dreyer, \{Cyrus E.\} and \{Van De Walle\}, \{Chris G.\}",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

month = dec,

day = "2",

doi = "10.1063/1.5126717",

language = "English",

volume = "115",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "23",

}

TY - JOUR

T1 - Giant polarization charge density at lattice-matched GaN/ScN interfaces

AU - Adamski, Nicholas L.

AU - Dreyer, Cyrus E.

AU - Van De Walle, Chris G.

PY - 2019/12/2

Y1 - 2019/12/2

N2 - Rock-salt ScN is a semiconductor with a small lattice mismatch to wurtzite GaN. Within the modern theory of polarization, ScN has a nonvanishing formal polarization along the [111] direction. As a result, we demonstrate that an interface between (0001) GaN and (111) ScN exhibits a large polarization discontinuity of -1.358 Cm - 2. Interfaces between ScN and wurtzite III-nitrides will exhibit a high-density electron gas at the (0001) GaN interface or a hole gas at the (0001) GaN interface, with carrier concentrations up to 8.5 × 10 14 cm-2. The large polarization difference and small strain make ScN a desirable choice for polarization-enhanced tunnel junctions within the III-nitride materials system. The large sheet carrier densities may also be useful for contacts or current spreading layers.

AB - Rock-salt ScN is a semiconductor with a small lattice mismatch to wurtzite GaN. Within the modern theory of polarization, ScN has a nonvanishing formal polarization along the [111] direction. As a result, we demonstrate that an interface between (0001) GaN and (111) ScN exhibits a large polarization discontinuity of -1.358 Cm - 2. Interfaces between ScN and wurtzite III-nitrides will exhibit a high-density electron gas at the (0001) GaN interface or a hole gas at the (0001) GaN interface, with carrier concentrations up to 8.5 × 10 14 cm-2. The large polarization difference and small strain make ScN a desirable choice for polarization-enhanced tunnel junctions within the III-nitride materials system. The large sheet carrier densities may also be useful for contacts or current spreading layers.

UR - https://www.scopus.com/pages/publications/85076820117

U2 - 10.1063/1.5126717

DO - 10.1063/1.5126717

M3 - Article

AN - SCOPUS:85076820117

SN - 0003-6951

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232103

ER -

Giant polarization charge density at lattice-matched GaN/ScN interfaces

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