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Growth and process induced dislocations in zinc oxide crystals

  • G. Dhanaraj
  • , M. Dudley
  • , D. Bliss
  • , M. Callahan
  • , M. Harris
  • Stony Brook University
  • Air Force Research Laboratory

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Zinc oxide crystals were grown using hydrothermal method, and the habit faces were indexed by computing from inter-axial angles of the as grown boules. The dislocation structures were studied using synchrotron white beam X-ray topography. Grown-in dislocations as well as process-induced defects were characterized in the ZnO crystals. Knoop and Vickers micro-hardness were studied on sliced crystal plates. Chemical etching was used to study the dislocations running perpendicular to the wafer.

Original languageEnglish
Pages (from-to)74-79
Number of pages6
JournalJournal of Crystal Growth
Volume297
Issue number1
DOIs
StatePublished - Dec 15 2006

Keywords

  • A1. Characterization
  • A1. Crystal morphology
  • A1. Defects
  • A2. Growth from solutions
  • A2. Hydrothermal crystal growth
  • A2. Single crystal growth

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