Growth mechanism and dislocation characterization of silicon carbide epitaxial films

Govindhan Dhanaraj; Yi Chen; Hui Chen; William M. Vetter; Hui Zhang; Michae Dudley

doi:10.1557/proc-0911-b05-27

Growth mechanism and dislocation characterization of silicon carbide epitaxial films

Govindhan Dhanaraj
, Yi Chen
, Hui Chen
, William M. Vetter
, Hui Zhang
, Michae Dudley

Materials Science and Engineering

Stony Brook University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

SiC homo-epitaxial layers were grown in a chemical vapor deposition process using silicon tetrachloride and propane precursors with hydrogen as a carrier gas. Growth rates were found to increase as temperatures increased at high carrier gas flow rate, while at lower carrier gas flow rate growth rates were observed to decrease as temperature increased. Based on the equilibrium model, "thermodynamically controlled growth" accounts for the growth rate reduction. The grown epitaxial layers were characterized using various techniques. Reduction in the threading screw dislocation (SD) density in the epilayers was observed. Suitable models were developed for explaining the reduction in the screw dislocation density as well as the conversion of basal plane dislocations (BPD) into threading edge dislocations (TED).

Original language	English
Title of host publication	Silicon Carbide 2006 - Materials, Processing and Devices
Publisher	Materials Research Society
Pages	157-162
Number of pages	6
ISBN (Print)	1558998721, 9781558998728
DOIs	https://doi.org/10.1557/proc-0911-b05-27
State	Published - 2006
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 18 2006 → Apr 20 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	911
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	04/18/06 → 04/20/06

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10.1557/proc-0911-b05-27

Cite this

Dhanaraj, G., Chen, Y., Chen, H., Vetter, W. M., Zhang, H., & Dudley, M. (2006). Growth mechanism and dislocation characterization of silicon carbide epitaxial films. In Silicon Carbide 2006 - Materials, Processing and Devices (pp. 157-162). (Materials Research Society Symposium Proceedings; Vol. 911). Materials Research Society. https://doi.org/10.1557/proc-0911-b05-27

@inproceedings{333abab469d840e78395bb075a6c9efc,

title = "Growth mechanism and dislocation characterization of silicon carbide epitaxial films",

abstract = "SiC homo-epitaxial layers were grown in a chemical vapor deposition process using silicon tetrachloride and propane precursors with hydrogen as a carrier gas. Growth rates were found to increase as temperatures increased at high carrier gas flow rate, while at lower carrier gas flow rate growth rates were observed to decrease as temperature increased. Based on the equilibrium model, {"}thermodynamically controlled growth{"} accounts for the growth rate reduction. The grown epitaxial layers were characterized using various techniques. Reduction in the threading screw dislocation (SD) density in the epilayers was observed. Suitable models were developed for explaining the reduction in the screw dislocation density as well as the conversion of basal plane dislocations (BPD) into threading edge dislocations (TED).",

author = "Govindhan Dhanaraj and Yi Chen and Hui Chen and Vetter, \{William M.\} and Hui Zhang and Michae Dudley",

year = "2006",

doi = "10.1557/proc-0911-b05-27",

language = "English",

isbn = "1558998721",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "157--162",

booktitle = "Silicon Carbide 2006 - Materials, Processing and Devices",

note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 20-04-2006",

}

Dhanaraj, G, Chen, Y, Chen, H, Vetter, WM, Zhang, H & Dudley, M 2006, Growth mechanism and dislocation characterization of silicon carbide epitaxial films. in Silicon Carbide 2006 - Materials, Processing and Devices. Materials Research Society Symposium Proceedings, vol. 911, Materials Research Society, pp. 157-162, 2006 MRS Spring Meeting, San Francisco, CA, United States, 04/18/06. https://doi.org/10.1557/proc-0911-b05-27

Growth mechanism and dislocation characterization of silicon carbide epitaxial films. / Dhanaraj, Govindhan; Chen, Yi; Chen, Hui et al.
Silicon Carbide 2006 - Materials, Processing and Devices. Materials Research Society, 2006. p. 157-162 (Materials Research Society Symposium Proceedings; Vol. 911).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth mechanism and dislocation characterization of silicon carbide epitaxial films

AU - Dhanaraj, Govindhan

AU - Chen, Yi

AU - Chen, Hui

AU - Vetter, William M.

AU - Zhang, Hui

AU - Dudley, Michae

PY - 2006

Y1 - 2006

N2 - SiC homo-epitaxial layers were grown in a chemical vapor deposition process using silicon tetrachloride and propane precursors with hydrogen as a carrier gas. Growth rates were found to increase as temperatures increased at high carrier gas flow rate, while at lower carrier gas flow rate growth rates were observed to decrease as temperature increased. Based on the equilibrium model, "thermodynamically controlled growth" accounts for the growth rate reduction. The grown epitaxial layers were characterized using various techniques. Reduction in the threading screw dislocation (SD) density in the epilayers was observed. Suitable models were developed for explaining the reduction in the screw dislocation density as well as the conversion of basal plane dislocations (BPD) into threading edge dislocations (TED).

AB - SiC homo-epitaxial layers were grown in a chemical vapor deposition process using silicon tetrachloride and propane precursors with hydrogen as a carrier gas. Growth rates were found to increase as temperatures increased at high carrier gas flow rate, while at lower carrier gas flow rate growth rates were observed to decrease as temperature increased. Based on the equilibrium model, "thermodynamically controlled growth" accounts for the growth rate reduction. The grown epitaxial layers were characterized using various techniques. Reduction in the threading screw dislocation (SD) density in the epilayers was observed. Suitable models were developed for explaining the reduction in the screw dislocation density as well as the conversion of basal plane dislocations (BPD) into threading edge dislocations (TED).

UR - https://www.scopus.com/pages/publications/33750371845

U2 - 10.1557/proc-0911-b05-27

DO - 10.1557/proc-0911-b05-27

M3 - Conference contribution

AN - SCOPUS:33750371845

SN - 1558998721

SN - 9781558998728

T3 - Materials Research Society Symposium Proceedings

SP - 157

EP - 162

BT - Silicon Carbide 2006 - Materials, Processing and Devices

PB - Materials Research Society

T2 - 2006 MRS Spring Meeting

Y2 - 18 April 2006 through 20 April 2006

ER -

Growth mechanism and dislocation characterization of silicon carbide epitaxial films

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