High dimensional addressable LED arrays based on type i GaInAsSb quantum wells with quinternary AlGaInAsSb barriers

S. Jung; S. Suchalkin; D. Westerfeld; G. Kipshidze; E. Golden; D. Snyder; G. Belenky

doi:10.1088/0268-1242/26/8/085022

High dimensional addressable LED arrays based on type i GaInAsSb quantum wells with quinternary AlGaInAsSb barriers

S. Jung
, S. Suchalkin
, D. Westerfeld
, G. Kipshidze
, E. Golden
, D. Snyder
, G. Belenky

Electrical Engineering

Stony Brook University
Air Force Research Laboratory

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

GaSb-based type I InGaAsSb quantum well mid-infrared (mid-IR) light-emitting diodes (LEDs) operated at wavelengths up to 3.66 νm are demonstrated. The application of quinternary AlGaInAsSb barriers improved hole confinement in the quantum wells and enabled an LED radiant excitance of 1.3 W cm^-2 (λ = 3.66 νm) at 100 K which corresponds to the emittance of a blackbody at 1350 K. High-contrast individually addressed 512 × 512 LED arrays were designed and fabricated using wet etching. An accurate characterization technique for mid-IR LEDs has been developed.

Original language	English
Article number	085022
Journal	Semiconductor Science and Technology
Volume	26
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/26/8/085022
State	Published - Aug 2011

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title = "High dimensional addressable LED arrays based on type i GaInAsSb quantum wells with quinternary AlGaInAsSb barriers",

abstract = "GaSb-based type I InGaAsSb quantum well mid-infrared (mid-IR) light-emitting diodes (LEDs) operated at wavelengths up to 3.66 νm are demonstrated. The application of quinternary AlGaInAsSb barriers improved hole confinement in the quantum wells and enabled an LED radiant excitance of 1.3 W cm-2 (λ = 3.66 νm) at 100 K which corresponds to the emittance of a blackbody at 1350 K. High-contrast individually addressed 512 × 512 LED arrays were designed and fabricated using wet etching. An accurate characterization technique for mid-IR LEDs has been developed.",

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T1 - High dimensional addressable LED arrays based on type i GaInAsSb quantum wells with quinternary AlGaInAsSb barriers

AU - Jung, S.

AU - Suchalkin, S.

AU - Westerfeld, D.

AU - Kipshidze, G.

AU - Golden, E.

AU - Snyder, D.

AU - Belenky, G.

PY - 2011/8

Y1 - 2011/8

N2 - GaSb-based type I InGaAsSb quantum well mid-infrared (mid-IR) light-emitting diodes (LEDs) operated at wavelengths up to 3.66 νm are demonstrated. The application of quinternary AlGaInAsSb barriers improved hole confinement in the quantum wells and enabled an LED radiant excitance of 1.3 W cm-2 (λ = 3.66 νm) at 100 K which corresponds to the emittance of a blackbody at 1350 K. High-contrast individually addressed 512 × 512 LED arrays were designed and fabricated using wet etching. An accurate characterization technique for mid-IR LEDs has been developed.

AB - GaSb-based type I InGaAsSb quantum well mid-infrared (mid-IR) light-emitting diodes (LEDs) operated at wavelengths up to 3.66 νm are demonstrated. The application of quinternary AlGaInAsSb barriers improved hole confinement in the quantum wells and enabled an LED radiant excitance of 1.3 W cm-2 (λ = 3.66 νm) at 100 K which corresponds to the emittance of a blackbody at 1350 K. High-contrast individually addressed 512 × 512 LED arrays were designed and fabricated using wet etching. An accurate characterization technique for mid-IR LEDs has been developed.

UR - https://www.scopus.com/pages/publications/80051956619

U2 - 10.1088/0268-1242/26/8/085022

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M3 - Article

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SN - 0268-1242

VL - 26

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

M1 - 085022

ER -

High dimensional addressable LED arrays based on type i GaInAsSb quantum wells with quinternary AlGaInAsSb barriers

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