High-frequency oscillations in an α-Si/Si(p)/Si(n) device

V. A. Dorosinets; V. A. Samuilov; H. Roskos; K. Kyritsi; A. N. Anagnostopoulos; G. L. Bleris

doi:10.1016/S0960-0779(02)00354-5

High-frequency oscillations in an α-Si/Si(p)/Si(n) device

V. A. Dorosinets
, V. A. Samuilov
, H. Roskos
, K. Kyritsi
, A. N. Anagnostopoulos
, G. L. Bleris

Materials Science and Engineering

Belarusian State University
Goethe University Frankfurt

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The high-frequency oscillations in an α-Si/Si(p)/Si(n) heterojunction transistor were studied. The frequency dependence of the oscillations on the base-emitter and collector-emitter voltage and on the load resistance were presented. In this heterojunction device the schematic cross-section along with its junction diagram, switching phenomena and current oscillations were reported.

Original language	English
Pages (from-to)	289-295
Number of pages	7
Journal	Chaos, solitons and fractals
Volume	17
Issue number	2-3
DOIs	https://doi.org/10.1016/S0960-0779(02)00354-5
State	Published - Jul 2003

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10.1016/S0960-0779(02)00354-5

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title = "High-frequency oscillations in an α-Si/Si(p)/Si(n) device",

abstract = "The high-frequency oscillations in an α-Si/Si(p)/Si(n) heterojunction transistor were studied. The frequency dependence of the oscillations on the base-emitter and collector-emitter voltage and on the load resistance were presented. In this heterojunction device the schematic cross-section along with its junction diagram, switching phenomena and current oscillations were reported.",

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T1 - High-frequency oscillations in an α-Si/Si(p)/Si(n) device

AU - Dorosinets, V. A.

AU - Samuilov, V. A.

AU - Roskos, H.

AU - Kyritsi, K.

AU - Anagnostopoulos, A. N.

AU - Bleris, G. L.

PY - 2003/7

Y1 - 2003/7

N2 - The high-frequency oscillations in an α-Si/Si(p)/Si(n) heterojunction transistor were studied. The frequency dependence of the oscillations on the base-emitter and collector-emitter voltage and on the load resistance were presented. In this heterojunction device the schematic cross-section along with its junction diagram, switching phenomena and current oscillations were reported.

AB - The high-frequency oscillations in an α-Si/Si(p)/Si(n) heterojunction transistor were studied. The frequency dependence of the oscillations on the base-emitter and collector-emitter voltage and on the load resistance were presented. In this heterojunction device the schematic cross-section along with its junction diagram, switching phenomena and current oscillations were reported.

UR - https://www.scopus.com/pages/publications/0037410984

U2 - 10.1016/S0960-0779(02)00354-5

DO - 10.1016/S0960-0779(02)00354-5

M3 - Article

AN - SCOPUS:0037410984

SN - 0960-0779

VL - 17

SP - 289

EP - 295

JO - Chaos, solitons and fractals

JF - Chaos, solitons and fractals

IS - 2-3

ER -

High-frequency oscillations in an α-Si/Si(p)/Si(n) device

Abstract

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