High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctions

W. I. Wang; E. E. Mendez; Frank Stern

doi:10.1063/1.95339

High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctions

W. I. Wang
, E. E. Mendez
, Frank Stern

Physics and Astronomy

IBM

Research output: Contribution to journal › Article › peer-review

152 Scopus citations

Abstract

Modulation-doped p-AlGaAs/GaAs heterojunctions have been grown by molecular beam epitaxy. The effects of undoped AlGaAs spacer thickness on sheet carrier density and on Hall mobility have been investigated. A mobility of 97 000 cm² V^-1 s^-1 has been obtained at 4.2 K for a sheet density of 1.7×10¹¹ cm^-2. This is the highest mobility reported for holes in III-V compound semiconductors. A valence-band offset of 210±30 meV was deduced for Al_0.5Ga_0.5As /GaAs heterojunctions.

Original language	English
Pages (from-to)	639-641
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	6
DOIs	https://doi.org/10.1063/1.95339
State	Published - 1984

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title = "High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctions",

abstract = "Modulation-doped p-AlGaAs/GaAs heterojunctions have been grown by molecular beam epitaxy. The effects of undoped AlGaAs spacer thickness on sheet carrier density and on Hall mobility have been investigated. A mobility of 97 000 cm2 V-1 s-1 has been obtained at 4.2 K for a sheet density of 1.7×1011 cm-2. This is the highest mobility reported for holes in III-V compound semiconductors. A valence-band offset of 210±30 meV was deduced for Al0.5Ga0.5As /GaAs heterojunctions.",

author = "Wang, \{W. I.\} and Mendez, \{E. E.\} and Frank Stern",

year = "1984",

doi = "10.1063/1.95339",

language = "English",

volume = "45",

pages = "639--641",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctions

AU - Wang, W. I.

AU - Mendez, E. E.

AU - Stern, Frank

PY - 1984

Y1 - 1984

N2 - Modulation-doped p-AlGaAs/GaAs heterojunctions have been grown by molecular beam epitaxy. The effects of undoped AlGaAs spacer thickness on sheet carrier density and on Hall mobility have been investigated. A mobility of 97 000 cm2 V-1 s-1 has been obtained at 4.2 K for a sheet density of 1.7×1011 cm-2. This is the highest mobility reported for holes in III-V compound semiconductors. A valence-band offset of 210±30 meV was deduced for Al0.5Ga0.5As /GaAs heterojunctions.

AB - Modulation-doped p-AlGaAs/GaAs heterojunctions have been grown by molecular beam epitaxy. The effects of undoped AlGaAs spacer thickness on sheet carrier density and on Hall mobility have been investigated. A mobility of 97 000 cm2 V-1 s-1 has been obtained at 4.2 K for a sheet density of 1.7×1011 cm-2. This is the highest mobility reported for holes in III-V compound semiconductors. A valence-band offset of 210±30 meV was deduced for Al0.5Ga0.5As /GaAs heterojunctions.

UR - https://www.scopus.com/pages/publications/0021498117

U2 - 10.1063/1.95339

DO - 10.1063/1.95339

M3 - Article

AN - SCOPUS:0021498117

SN - 0003-6951

VL - 45

SP - 639

EP - 641

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctions

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